Results 241 to 250 of about 35,050 (276)

Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization. [PDF]

Adv Sci (Weinh)
Lee J, Kim G, Seok H, Han S, Shim H, Cha Y, Son S, Choi H, Grzeszczyk M, Bogucki A, Choi Y, Kim S, Lee H, Park C, Kim G, Hwang H, Kim H, Lee D, Son S, Back G, Shin H, Choi D, Ollier A, Kim YJ, Fang L, Han G, Jung GE, Lee Y, Kim HU, Watanabe K, Taniguchi T, Bae S, Heinrich A, Jang WJ, Kim T.   +34 more
europepmc   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source

Anisotropic Resistive Switching in NiO Thin Films Deposited on Stepped MgO Substrates. [PDF]

Nanomaterials (Basel)
Duisebayev T, Zhazitov M, Abdullah M, Tezekbay Y, Syrlybekov A, Ibraimov M, Khaniyev B, Serikov T, Nuraje N, Toktarbaiuly O.   +9 more
europepmc   +1 more source

Fast prototyping of memristors for ReRAMs and neuromorphic computing.

Nanoscale
Marraccini G, Strangio S, Dimaggio E, Sargeni R, Pieri F, Sozen Y, Castellanos-Gomez A, Fiori G.   +7 more
europepmc   +1 more source

The Influence of the Ar/N₂ Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]

Materials (Basel)
Jeżak P, Seweryn A, Klepka M, Mroczyński R.   +3 more
europepmc   +1 more source

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Halide Perovskites for Resistive Switching Memory

The Journal of Physical Chemistry Letters, 2021
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture.
Kaijin Kang, Wei Hu, Xiaosheng Tang
openaire   +2 more sources

Oxides based resistive switching memories

Oxide-based Materials and Devices XII, 2021
This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers.
Kalem, Seref, Tekin, Serdar B., Kaya, Zahit E., Jalaguier, Eric, Roelofs, Robin, Yildirim, Saffet, Yavuzcetin, Ozgur, Wenger, Christian   +7 more
openaire   +2 more sources

Nanoionics-based resistive switching memories

Nature Materials, 2007
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
openaire   +2 more sources

Electrochemically prepared oxides for resistive switching memories

Faraday Discussions, 2019
Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.
A. Zaffora, F. Di Quarto, H. Habazaki, I. Valov, M. Santamaria   +4 more
openaire   +4 more sources