Results 21 to 30 of about 35,050 (276)

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Frontiers in Nanotechnology, 2023
The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman, A. Jaman, A. S. Goossens, A. S. Goossens, J. J. L. van Rijn, L. van der Zee, T. Banerjee, T. Banerjee   +7 more
doaj   +1 more source

Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]

, 2017
Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu, Asanuma, Baikalov, Beck, Bertaud, Borgatti, Borgatti, Chen, Chen, Chevallier, Dirkmann, Dudy, Fabris, Fairley, Fors, French, Fujii, Garvie, Govoreanu, Govoreanu, Gundlach, Hansen, Hasan, Herpers, Herrero-Martin, Hu, Hunt, Ifland, Ignatiev, Jablonski, Jeon, Jeong, Kawano, Kobayashi, Kohlstedt, Kroeger, Lee, Lenser, Luis Garcia-Munoz, Marot, McComb, Meyer, Muenstermann, Nian, Oka, Oshima, Ostanin, Ostanin, Park, Parreira, Pomfret, Quintero, Richter, Rozenberg, Sacchi, Santander-Syro, Sawa, Sawa, Schramm, Scott, Seong, Shono, Sim, Simmons, Slooten, Sowinska, Truccato, Walsh, Waser, Watanabe, Watanabe, Xue   +71 more
core   +1 more source

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Frontiers in Nanotechnology, 2021
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao, Yudi Zhao, Ruiqi Chen, Peng Huang, Jinfeng Kang   +4 more
doaj   +1 more source

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu, Lai-Mun Wong, Shijie Wang, Kaiyang Zeng   +3 more
doaj   +1 more source

How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]

, 2018
Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying, Choudhary, Satyan, De Roo, Jonathan, De Keukeleere, Katrien, Van Driessche, Isabel, Crosby, Alfred J, Nonnenmann, Stephen S   +6 more
core   +2 more sources

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]

, 2019
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety, Kumar, Ajeet, Kumar, Ashok, Malode, Rupali R.   +3 more
core   +2 more sources

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Advanced Intelligent Systems, 2022
Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma   +7 more
doaj   +1 more source

A Light‐Controlled Resistive Switching Memory

Advanced Materials, 2012
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Ungureanu, Mariana, Zazpe, Raul, Golmar, Federico, Stoliar, Pablo Alberto, Llopis, Roger, Casanova, Felix, Hueso, Luis E.   +6 more
openaire   +3 more sources

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory [PDF]

Nano Letters, 2008
We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming ...
Sung Hyun, Jo, Wei, Lu
openaire   +2 more sources