Results 31 to 40 of about 35,050 (276)
First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]
, 2011 Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck +19 more
core +3 more sources
Multistate resistive switching behaviors for neuromorphic computing in memristor
Materials Today Advances, 2021 Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing
B. Sun +7 more
doaj +1 more source
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]
, 2014 Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J. +5 more
core +1 more source
Resistive Switching Memory Devices Based on Proteins
Advanced Materials, 2015 Resistive switching memory constitutes a prospective candidate for next‐generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices.
Wang, Hong +5 more
openaire +3 more sources
Advanced Electronic Materials, 2018 Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang +5 more
doaj +1 more source
Nanoscale Research Letters, 2022 Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata +3 more
doaj +1 more source
Advanced physical modeling of SiOx resistive random access memories [PDF]
, 2016 We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen +8 more
core +1 more source
TaO x -based resistive switching memories: prospective and challenges [PDF]
Nanoscale Research Letters, 2013 Abstract Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications.
Prakash, Amit +2 more
openaire +2 more sources
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
doaj +1 more source
, 2009 We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu +7 more
core +1 more source