Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]
, 2015 Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub +4 more
core +1 more source
Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
doaj +1 more source
Investigating Unipolar Switching in Niobium Oxide Resistive Switches: Correlating Quantized Conductance and Mechanism [PDF]
, 2018 Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal ...
Deswal, Sweety +2 more
core +2 more sources
Plasma Modified Silicon Nitride Resistive Switching Memories
2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019 In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.
Karakolis, Panagiotis +7 more
openaire +2 more sources
Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution [PDF]
, 2014 Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications.
MacLaren, DA +2 more
core +1 more source
Nanoscale resistive switching memory devices: a review
Nanotechnology, 2019 In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth.
Stefan Slesazeck, Thomas Mikolajick
openaire +3 more sources
Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory [PDF]
, 2019 Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices.
Gu, CW, Hwang, BH, LEE, DONGHWA, Lee, JS
core +1 more source
Degenerate resistive switching and ultrahigh density storage in resistive memory [PDF]
Applied Physics Letters, 2014 We show that in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially ...
Lohn, Andrew J. +3 more
openaire +2 more sources
Targeting p38α in cancer: challenges, opportunities, and emerging strategies
Molecular Oncology, EarlyView.p38α normally regulates cellular stress responses and homeostasis and suppresses malignant transformation. In cancer, however, p38α is co‐opted to drive context‐dependent proliferation and dissemination. p38α also supports key functions in cells of the tumor microenvironment, including fibroblasts, myeloid cells, and T lymphocytes.
Angel R. Nebreda
wiley +1 more source
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
doaj +1 more source