Results 61 to 70 of about 35,050 (276)

Stochastic Memristive Devices for Computing and Neuromorphic Applications

, 2013
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems.
Choi, Shinhyun, Gaba, Siddharth, Lu, Wei, Sheridan, Patrick, Zhou, Jiantao   +4 more
core   +1 more source

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM [PDF]

, 2017
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed
Brunell, IF, Chalker, PR, Dawson, K, Dhanak, VR, Gibbon, JT, Guo, Y, Hall, S, Li, H, Potter, RJ, Robertson, J, Sedghi, N, Zhang, JF, Zhang, W   +12 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Data related to the nanoscale structural and compositional evolution in resistance change memories

Data in Brief, 2018
The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a
Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram   +8 more
doaj   +1 more source

Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

Nanomaterials, 2020
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, Oleg A. Ageev   +7 more
doaj   +1 more source

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. [PDF]

, 2016
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade.
Ahn, Geun Ho, Chung, Seungjun, Jang, Jingon, Javey, Ali, Jeong, Heejun, Jeong, Hyunhak, Kim, Tae-Young, Lee, Takhee, Song, Younggul, Yoo, Daekyoung   +9 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Scientific Reports, 2017
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from
Bohee Hwang, Jang-Sik Lee
doaj   +1 more source

Resistive switching in nanogap systems on SiO2 substrates

, 2009
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further
Chen, Collins, Collins, Dearnaley, Dearnaley, Dearnaley, Deshpande, Endo, Gould, Hirose, Jin, Kim, Kim, Li, Meister, Naitoh, Ouyang, Satoh, Scott, Shatzkes, Simmons, Sinitskii, Standley, Szot, Thurstans, Waser, Weitz, Wokaun, Yang, Yao   +29 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source