Results 71 to 80 of about 35,050 (276)
Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
npj 2D Materials and Applications, 2021 Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit.
Sanchali Mitra +2 more
doaj +1 more source
RRAM variability and its mitigation schemes [PDF]
, 2016 Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve +3 more
core +1 more source
Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules
Advanced Functional Materials, EarlyView.A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang +7 more
wiley +1 more source
Simplified ZrTiOx-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode [PDF]
, 2014 A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access ...
Cherng-En Sun +3 more
core +1 more source
A ZnTaOx Based Resistive Switching Random Access Memory [PDF]
ECS Solid State Letters, 2014 The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K. +5 more
openaire +1 more source
Laser‐Induced Graphene from Waste Almond Shells
Advanced Functional Materials, EarlyView.Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Materials Research Express, 2022 Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li +5 more
doaj +1 more source
High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications
Nanomaterials, 2021 One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar +5 more
doaj +1 more source
Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth [PDF]
Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices.
ji-min song, Lee, JS
core +1 more source
Emergence of Light‐Transforming Layered Hybrid Halide Perovskites
Advanced Functional Materials, EarlyView.The emerging class of light‐transforming layered halide perovskite materials is reviewed, outlining challenges for their development and perspectives toward application in the future. Abstract Layered hybrid halide perovskites (LHPs) have attracted considerable attention in optoelectronics.
Ghewa AlSabeh, Jovana V. Milić
wiley +1 more source