Results 81 to 90 of about 35,050 (276)

Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications [PDF]

A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior.
Lee, JS, Un-Bin Han
core   +1 more source

Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping [PDF]

, 2017
The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the ...
Brunell, IF, Chalker, PR, Dawson, K, Dhanak, VR, Gibbon, JT, Guo, Y, Hall, S, Li, H, Potter, RJ, Robertson, J, Sedghi, N, Zhang, JF, Zhang, WD   +12 more
core   +2 more sources

Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching

Advanced Functional Materials, EarlyView.
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey, Uwe Hübner, Albane Benardais, Xiaofei Wu, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Henrik Schneidewind, Markus A Schmidt, Virginie Nazabal, Volker Deckert, Jer‐Shing Huang, Wei Wang   +12 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Interfacial chemical bonding-mediated ionic resistive switching. [PDF]

, 2017
In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2-Pt interface, as opposed to a physico-chemical ...
Han, Jin-Woo, Hwang, Cheol Seong, Kang, Hung-Sen, Lee, Eunseok, Lee, Min Hwan, Moon, Hyeongjoo, Zade, Vishal   +6 more
core   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

AIP Advances, 2012
Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell.
Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, Satoru Kishida   +3 more
doaj   +1 more source

Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS2 Quantum Dots for Resistive Random‐Access Memory Devices

Advanced Materials Interfaces, 2023
Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing multi‐level memory devices. However, achieving a high peak‐to‐valley ratio of NDR is a formidable challenge for a reliable multi‐level switch.
Sonia Sharma, Yu‐Ting Chen, Svette Reina Merden S. Santiago, Sheenly Anne Saavedra, Chih‐Lung Chou, Kuan‐Cheng Chiu, Ji‐Lin Shen   +6 more
doaj   +1 more source

Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect

, 2018
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
core   +1 more source

INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES

Journal of Advanced Dielectrics, 2011
Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The
SHENG-YU WANG, TSEUNG-YUEN TSENG
openaire   +1 more source