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Speed of return to normalcy after total shoulder arthroplasty. [PDF]
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Mechanism, Application, and Prospect of Fracturing-Flooding Technology: A Review. [PDF]
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Reverse recovery time characteristics of high power thyristors
2016 IEEE International Conference on High Voltage Engineering and Application (ICHVE), 2016The reverse recovery characteristics of the high power thyristor becomes increasing important to the converter valve designers as commutation failure often occurs in its reverse recovery process. Therefore, the recovery protection of converter valve is provided by thyristor control unit.
Lei Pang, Qiaogen Zhang, Longchen Liu
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Accurate Estimation of Diode Reverse-Recovery Characteristics From Datasheet Specifications
IEEE Transactions on Power Electronics, 2018This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes.
Utsab Kundu, Parthasarathi Sensarma
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Research on Spurious Triggering Characteristics during Reverse Recovery for Thyristors
2020 12th IEEE PES Asia-Pacific Power and Energy Engineering Conference (APPEEC), 2020The high power thyristor in HVDC thyristor valve easily suffers a transient voltage with a high rise rate du/dt, especially during reverse recovery, which may cause commutation failure or device damage. The du/dt triggering mechanism during thyristor reverse recovery process is analyzed theoretically based on semiconductor physics and the essential ...
Tao Fengbo
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Reverse recovery characteristics of high power thyristors in HVDC converter valve
IEEE Transactions on Dielectrics and Electrical Insulation, 2017The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investigated from the aspects of both external circuit and internal device physics.
Lei Pang, Qiaogen Zhang, Longchen Liu
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A simulation research on the reverse recovery characteristics of PIN diode
2011 International Conference on Electric Information and Control Engineering, 2011From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics.
Xuhui Wen, Yulin Zhong
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EMI Generation Characteristics of SiC and Si Diodes: Influence of Reverse-Recovery Characteristics
IEEE Transactions on Power Electronics, 2015Silicon carbide (SiC) Schottky diodes with zero reverse-recovery current (RRC) are perceived as superior due to their reduced switching losses. The absence of reverse-recovery behavior in these devices is also expected to result in reduced electromagnetic interference (EMI), compared with the conventional silicon (Si) PIN diodes.
Xibo Yuan, Sam Walder, Niall Oswald
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Diode Reverse Recovery Characteristics of a Shielded-Gate Trench Power MOSFET
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019A better understanding of the diode reverse-recovery behavior of power MOSFET is critical when designing a power electronics systems with faster switching speed, minimum switching losses, and higher system efficiency. In order to study the switching transient times, one needs to focus on both switching device architecture and circuit parasitic ...
Harshad Surdi
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