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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
Chinese Physics B, 2023A power MOSFET with integrated split gate and dummy gate (SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS. The split gate is surrounded by the source and shielded by the dummy gate. Consequently, the coupling area between the split gate and the drain electrode is reduced, thus the gate-to-drain charge (Q GD), reverse ...
Weizhong Chen +4 more
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Research on reverse recovery characteristics of SiGeC p-i-n diodes
Chinese Physics B, 2008This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is
Gao Yong, Liu Jing, Yang Yuan
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IEEE Transactions on Electron Devices, 1990
A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used to fabricate an epitaxial drift region Schottky diode in parallel with the parasitic body p-n junction diode of the power MOSFET.
K. Shenai, B.J. Baliga
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A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used to fabricate an epitaxial drift region Schottky diode in parallel with the parasitic body p-n junction diode of the power MOSFET.
K. Shenai, B.J. Baliga
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A study of correlation between traps and reverse-recovery characteristics of FWDs
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005The purpose of this work is to clarify the correlation between traps and reverse-recovery characteristics of freewheeling diodes (FWDs). The traps induced in FWDs have been examined by deep level transient spectroscopy and the reverse-recovery characteristics of FWD with IGBT have been measured and simulated with a trap model.
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2017 IEEE International Conference on Signal Processing, Informatics, Communication and Energy Systems (SPICES), 2017
Isolated DC-DC conversion with high power density is widely achieved by DC to high-frequency AC conversion, followed by isolation and high frequency rectification. Selection of high-performance diodes for such high-frequency rectification is challenging as a trade-off is often required among numerous conflicting parameters.
P. Sidharthan, G. Narayanan, S. K. Datta
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Isolated DC-DC conversion with high power density is widely achieved by DC to high-frequency AC conversion, followed by isolation and high frequency rectification. Selection of high-performance diodes for such high-frequency rectification is challenging as a trade-off is often required among numerous conflicting parameters.
P. Sidharthan, G. Narayanan, S. K. Datta
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Investigation of the reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers
Journal of Physics D: Applied Physics, 2018Abstract The reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers, which were fabricated on free-standing GaN substrates, were systematically investigated. The corrected reverse recovery time was obtained to be about 13.4 ns, 41.0 ns and 81.2 ns for 1 mm, 2 mm, and 3 mm diameter Schottky
Feifei Tian +6 more
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Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
Applied Physics Letters, 2006A vertical Schottky diode rectifier was fabricated using a bulk n−GaN wafer. Pt Schottky contacts were prepared on the Ga face and full backside ohmic contact was prepared on the N face by using Ti∕Al. The root mean square surface roughnesses of the Ga and N faces are 0.61 and 4.7nm, respectively.
Yi Zhou +8 more
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Fine pattern effect on leakage current and reverse recovery characteristics of MPS diode
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002In this paper, the fine pattern effect on both the leakage current and the soft recovery has been analyzed, for the first time. From experimental results, it has been achieved that the leakage current of the fine pattern MPS diode (FP-MPS) approaches to that of PiN diode while keeping high Schottky area ratio (-75%).
T. Naito +5 more
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One-dimensional analysis of reverse recovery and dv/dt triggering characteristics for a thyristor
IEEE Transactions on Electron Devices, 1980Reverse recovery and dv/dt triggering characteristics of a thyristor are analyzed using a one-dimensional numerical model, which consists of the solutions of the full set of semiconductor device equations, including the effect of the shorted emitter. The calculated waveforms of the anode voltage and current are in good agreement with the experimental ...
H. Fukui, M. Naito, Y. Terasawa
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Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction
Organic Electronics, 2017Abstract We study the junction behavior of poly (3,4-ethylenedioxythiophene):polystyrenesulphonate/n-Si hybrid organic/inorganic heterojunction by reverse recovery transient (RRT) characterization. RRT response for PEDOT:PSS/n-Si hybrid junction is reported for various n-Si doping concentration and forward bias current injection level.
Ari Bimo Prakoso +5 more
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