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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
Applied Physics Letters, 2003p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, VF was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (RON) was ∼5 mΩ cm2 at 300 K, with an ideality factor of ∼2 and activation energy for low forward current density of ∼1.6 eV ...
Y. Irokawa +11 more
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2020 International Conference on Electronics, Information, and Communication (ICEIC), 2020
In this paper, a novel silicon carbide (SiC) Super Junction (SJ) UMOSFET with Heterojunction Diode (HJD) is proposed and investigated by numerical simulation. The proposed structure features integrated HJD that substantially improves body diode characteristics while guarantees that no degradation of static characteristics of device.
Junghun Kim, Kwangsoo Kim
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In this paper, a novel silicon carbide (SiC) Super Junction (SJ) UMOSFET with Heterojunction Diode (HJD) is proposed and investigated by numerical simulation. The proposed structure features integrated HJD that substantially improves body diode characteristics while guarantees that no degradation of static characteristics of device.
Junghun Kim, Kwangsoo Kim
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu +4 more
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Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu +4 more
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2017 75th Annual Device Research Conference (DRC), 2017
Silicon double heterojunction (DH) solar cells represent a possible future path for high-efficiency, low-cost solar power. These cells forgo doped p-n and n+-n (or p+-p) homojunctions diffused at ∼900 °C in favor of < 200 °C-deposited selective heterojunction contacts, which block one type of carrier while allowing the other to pass freely[1].
Alexander H. Berg, James C. Sturm
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Silicon double heterojunction (DH) solar cells represent a possible future path for high-efficiency, low-cost solar power. These cells forgo doped p-n and n+-n (or p+-p) homojunctions diffused at ∼900 °C in favor of < 200 °C-deposited selective heterojunction contacts, which block one type of carrier while allowing the other to pass freely[1].
Alexander H. Berg, James C. Sturm
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Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate
Semiconductor Science and Technology, 2017The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress.
Hsien-Chin Chiu +5 more
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Materials Chemistry and Physics, 2004
Abstract Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much.
S.M Kang +5 more
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Abstract Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much.
S.M Kang +5 more
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Characteristics and Modeling of PN Junction Diode in Verilog-A Including Reverse Recovery
2021 IEEE 6th International Conference on Computing, Communication and Automation (ICCCA), 2021Bhattiprolu Nikhil Prabhat +1 more
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Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014Zhaohui Wang +4 more
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An ANN Assisted Reverse Recovery of Diode Model for Switching-on Characteristics of IGBT Devices
2023Shih, Abby, Zeyss, Felix, Umar, Zeeshan
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Optimization of the Reverse Recovery Characteristics of 500V VDMOS
2024 Photonics & Electromagnetics Research Symposium (PIERS)Lixiang Wang +2 more
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