Preliminary field evaluation and exploratory external-association analysis of a modified wellness questionnaire for short-term monitoring in elite male water polo players. [PDF]
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Capacity Degradation Mechanisms, Recovery Strategies, and Challenges of Flow Batteries. [PDF]
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Reverse recovery time characteristics of high power thyristors
2016 IEEE International Conference on High Voltage Engineering and Application (ICHVE), 2016The reverse recovery characteristics of the high power thyristor becomes increasing important to the converter valve designers as commutation failure often occurs in its reverse recovery process. Therefore, the recovery protection of converter valve is provided by thyristor control unit.
Qiaogen Zhang, Longchen Liu
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Reverse recovery characteristics of high power thyristors in HVDC converter valve
IEEE Transactions on Dielectrics and Electrical Insulation, 2017The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investigated from the aspects of both external circuit and internal device physics.
Longchen Liu
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Accurate Estimation of Diode Reverse-Recovery Characteristics From Datasheet Specifications
IEEE Transactions on Power Electronics, 2018This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes.
Utsab Kundu, Parthasarathi Sensarma
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A simulation research on the reverse recovery characteristics of PIN diode
2011 International Conference on Electric Information and Control Engineering, 2011From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics.
Xuhui Wen, Yulin Zhong
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EMI Generation Characteristics of SiC and Si Diodes: Influence of Reverse-Recovery Characteristics
IEEE Transactions on Power Electronics, 2015Silicon carbide (SiC) Schottky diodes with zero reverse-recovery current (RRC) are perceived as superior due to their reduced switching losses. The absence of reverse-recovery behavior in these devices is also expected to result in reduced electromagnetic interference (EMI), compared with the conventional silicon (Si) PIN diodes.
Sam Walder, Xibo Yuan, Niall Oswald
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Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
IEEE Transactions on Electron Devices, 2002Schottky rectifiers with implanted p/sup +/ guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-3.0 /spl Omega//spl middot/cm/sup 2/, while the turn-on voltage was /spl sim/1.8 V.
Jen-Inn Chyi, Fan Ren, A P Zhang
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Diode Reverse Recovery Characteristics of a Shielded-Gate Trench Power MOSFET
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019A better understanding of the diode reverse-recovery behavior of power MOSFET is critical when designing a power electronics systems with faster switching speed, minimum switching losses, and higher system efficiency. In order to study the switching transient times, one needs to focus on both switching device architecture and circuit parasitic ...
Zia Hossain +2 more
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