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Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
IEEE Transactions on Electron Devices, 2002Schottky rectifiers with implanted p/sup +/ guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-3.0 /spl Omega//spl middot/cm/sup 2/, while the turn-on voltage was /spl sim/1.8 V.
J W Johnson, A P Zhang, F Ren
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2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC), 2016
The high power thyristor is the basic unit in HVDC converter valve, and its transient performance has a tremendous influence on the reliability, stability of the whole power system and designs of thyristor control unit. For this reason, each thyristor needs to be tested routinely before the operation of the power system.
Tonglei Wang, Lei Pang, Qiaogen Zhang
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The high power thyristor is the basic unit in HVDC converter valve, and its transient performance has a tremendous influence on the reliability, stability of the whole power system and designs of thyristor control unit. For this reason, each thyristor needs to be tested routinely before the operation of the power system.
Tonglei Wang, Lei Pang, Qiaogen Zhang
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High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
Materials Science Forum, 2014The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier ...
Koji Nakayama +2 more
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A snapback suppressed reverse-conducting IGBT with soft reverse recovery characteristic
Superlattices and Microstructures, 2013Abstract A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring floating P-region (P-float) embedded in the n-buffer layer is proposed. The P-float plays three roles at different working conditions. Firstly, it introduces a barrier in the n-buffer to obstruct the electron current from flowing directly to the n-collector at small ...
Weizhong Chen +5 more
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EMI generation characteristics of SiC diodes: Influence of reverse recovery characteristics
7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014), 2014In this paper the influence of silicon carbide (SiC) diodes on electromagnetic interference (EMI) generation in hard-switched power converters is investigated. The absence of reverse-recovery behaviour in these devices is expected to result in reduced EMI generation, in addition to significantly reducing switching losses.
Walder, Sam D +2 more
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Journal of the Taiwan Institute of Chemical Engineers, 2021
Abstract (1)Background. For chemical processes, due to external or internal factors, the system characteristic will not remain unchanged, and the reversal characteristic is a typical case where the system characteristic will change to the opposite characteristic.
Bo Chen, Xiong-Lin Luo, Xin Wan
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Abstract (1)Background. For chemical processes, due to external or internal factors, the system characteristic will not remain unchanged, and the reversal characteristic is a typical case where the system characteristic will change to the opposite characteristic.
Bo Chen, Xiong-Lin Luo, Xin Wan
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Study on reverse recovery characteristics of reverse-blocking IGBT applied in matrix converter
Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005., 2005In the last few decades, there has been considerable interest in AC to AC direct power conversion circuit known as matrix converter in the power electronics circle, but the commercial adoption of matrix converter is limited for the lack of suitable single power switches which is capable of blocking the voltages and conducting currents in both ...
null Shuyun Jia +2 more
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Numerical modeling of reverse recovery characteristic in silicon pin diodes
Solid-State Electronics, 2018Abstract A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters.
Yusuke Yamashita, Hiroshi Tadano
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An advanced FWD design concept with superior soft reverse recovery characteristics
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002In this paper an improved FWD design concept has been investigated having superior soft reverse recovery behavior, for the first time. The basic concept of the FWD design is a combination of low anode injection efficiency (MPS structure) and inhomogeneous lifetime controlling (platinum) in order to achieve the optimum carrier distributions.
M. Nemoto +5 more
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Study on reverse recovery characteristics of thyristor used in HVDC converter valve
12th IET International Conference on AC and DC Power Transmission (ACDC 2016), 2016As the core component of the HVDC transmission converter valve, thyristors' reverse recovery characteristics have important influence on electromagnetic transient characteristics of the converter valve, and are also the theoretical foundation for the converter valve design, manufacture, operation and maintenance.
W.F. Li +10 more
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