Results 171 to 180 of about 13,298 (199)

Bilayer Dielectrics for RRAM Devices

ECS Meeting Abstracts, 2018
Non-volatile resistive random-access memory (RRAM) devices are currently being investigated as a low power, high density and high-speed alternative DRAM (1). A transition metal oxide dielectric layer is typically used as an insulating layer in a metal-insulator-metal (MIM) structure.
Durgamadhab Misra, Sabiha Sultana, Barsha Jain, Navakanta Bhat, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink   +8 more
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Volatility Characterization for RRAM Devices

IEEE Electron Device Letters, 2017
Emerging technologies, such as resistive random access memory (RRAM), are being actively researched for its potential applications in developing new technologies inspired by brainlike neuromorphic computing. However, developing automated characterization algorithms for the metastable resistive state (RS) transitions, i.e., volatility in the myriad RRAM
Isha Gupta, Alexantrou Serb, Radu Berdan, Ali Khiat, Themistoklis Prodromakis   +4 more
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Vanadium Oxide Based RRAM Device

MRS Advances, 2017
Forming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from
Zhenni Wan, Robert B. Darling, M. P. Anantram   +2 more
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Microscopic KMC Modeling of Oxide RRAMs

2019
We investigate the microscopic behavior of oxide-based resistive random-access memory (RRAM) cells by using a unique three-dimensional (3D) physical simulator. RRAMs are attracting substantial attention and are considered as the next generation of non-volatile memory technologies.
Toufik Sadi, Asen Asenov
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Memristor-based RRAM with applications

Science China Information Sciences, 2012
Recently acclaimed the fourth fundamental circuit element, the memristor was theoretically predicted by Leon Chua in 1971, although its single device electronic implementation eluded the attention of integrated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard (HP) Laboratory researchers while developing
ShuKai Duan, XiaoFang Hu, LiDan Wang, ChuanDong Li, Pinaki Mazumder   +4 more
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Thermometry of Filamentary RRAM Devices

IEEE Transactions on Electron Devices, 2015
Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is based on short-pulsed measurements and the other on the measurement of minority-carrier injection from the filament into a semiconductor electrode by thermionic emission.
Eilam Yalon, Abhishek A. Sharma, Marek Skowronski, James A. Bain, Dan Ritter, Ilya V. Karpov   +5 more
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RRAM-Based Analog Approximate Computing

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2015
Approximate computing is a promising design paradigm for better performance and power efficiency. In this paper, we propose a power efficient framework for analog approximate computing with the emerging metal-oxide resistive switching random-access memory (RRAM) devices.
Boxun Li, Peng Gu, Yi Shan, Yu Wang, Yiran Chen, Huazhong Yang   +5 more
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Resistance switching for RRAM applications

Science China Information Sciences, 2011
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen, HengYuan Lee, YuSheng Chen, YenYa Hsu, LiJie Zhang, PangShiu Chen, WeiSu Chen, PeiYi Gu, WenHsing Liu, SuMin Wang, ChenHan Tsai, ShyhShyuan Sheu, MingJinn Tsai, Ru Huang   +13 more
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Resistance Non-volatile Memory – RRAM

MRS Proceedings, 2007
AbstractElectric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM).
Alex Ignatiev, Naijuan Wu, Xin Chen, Yibo Nian, Christina Papagianni, Shangqing Liu, John Strozier   +6 more
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RRAM reliability discussion group summary

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014
Operating principles and physical mechanisms, variability and reliability of resistive random access memory (RRAM), limiting factors and future trends in RRAM technology were discussed in the group. Flash memory, the primary type of nonvolatile memory in use today, has a number of problems with die scaling and with an increase of the memory capacity ...
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