Results 91 to 100 of about 51,456 (290)

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

, 2013
By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes.
Chen, Lang, Guo, Rui, Lim, Zhi Shiuh, Wang, Junling, You, Lu, Yuan, Guoliang, Zhou, Yang, Zou, Xi   +7 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

, 2004
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of
A. Abragam, A. C. Gossard, D. D. Awschalom, J. Berezovsky, J. P. McGuire, J. Stephens, L. J. Sham   +6 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

, 2012
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature ...
Appenzeller J., Appenzeller J., Asenov A., Bachtold A., Bjork M. T., Bucher E., Cai W., Chen Z., Cui Y., Derycke V., Gambino J., Gentile P., Georgios Katsaros, Heinzig A., Huang Y., Iwai H., Koren E., Lee J. U., Leonard F., Martin D., Massimo Mongillo, McAlpine M. C., Morimoto T., Mueller T., Murarka S. P., Panayotis Spathis, Pascal Gentile, Patolsky F., Perea D. E., Pierre M., Silvano De Franceschi, Storm K., Tung R. T., Weber W. M., Yang C., Yang C., Yang W.   +36 more
core   +3 more sources

Schottky barrier

Citation: 'Schottky barrier' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08870 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Balancing Electrons to Break the Activity‐Selectivity Trade‐Off in H2O2 Electrosynthesis

Advanced Functional Materials, EarlyView.
Carrier‐concentration balancing in CuS is achieved by coupling cobalt dopants with cobalt vacancies, converting CuS from p‐ to n‐type to accelerate 2e− ORR while withdrawing excess carriers to optimize *OOH binding for H2O2 desorption. The catalyst reaches 8.14 mol g−1 h−1 with >84% selectivity in 1.0 M KOH and drives robust electro‐Fenton dye ...
Hangning Liu, Changhui Sun, Luyao Wang, Yuhang Cheng, Yi Xin, Xuyun Guo, Hui Li, Valeria Nicolosi, Yuhai Dou, Peng Li, Tianyi Ma, Jie Wang   +11 more
wiley   +1 more source

Revealing the Hidden Role of Cd in p‐Type Mg3Sb2: Enhanced Thermoelectric Performance by Grain Boundary Segregation Engineering

Advanced Functional Materials, EarlyView.
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li, Deming Dong, Xiaoyu Yang, Jun Qian, Mengruizhe Kong, Han Wan, Ni Ma, Wei Bai, Pengfei Nan, Binghui Ge, Jiming Song, G. Jeffrey Snyder, Yuan Yu   +12 more
wiley   +1 more source

Schottky contacts to In2O3

APL Materials, 2014
n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J. S. Speck   +5 more
doaj   +1 more source

Development and fabrication of improved Schottky power diodes, phases I and II [PDF]

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide.
Cordes, L. F., Garfinkle, M., Taft, E. A.   +2 more
core   +1 more source