Results 131 to 140 of about 9,132 (212)

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. [PDF]

Materials (Basel), 2023
Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I.   +5 more
europepmc   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]

Sci Rep
Milazzo S, Greco G, Mirabella S, Iucolano F, Roccaforte F.   +4 more
europepmc   +1 more source

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. [PDF]

Micromachines (Basel), 2023
Mandal KC, Chaudhuri SK, Nag R.
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes. [PDF]

Materials (Basel)
Lu S, Zhang X, Wang S, Li M, Jiao S, Liang Y, Wang W, Zhang J.   +7 more
europepmc   +1 more source

Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]

Materials (Basel), 2022
Jiao T, Chen W, Li Z, Diao Z, Dang X, Chen P, Dong X, Zhang Y, Zhang B.   +8 more
europepmc   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source

Au-Si Diffusion Effects on Surface Plasmon Resonance Sensor Using Internal Photoemission at Metal/Si Schottky Barrier. [PDF]

ACS Omega
Ukaji M, Abubakr E, Imai Y, Kan T.
europepmc   +1 more source

Schottky barrier height engineering on MoS₂ field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]

Discov Nano, 2023
Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc   +1 more source