Results 151 to 160 of about 9,132 (212)

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS₂ Transistors. [PDF]

Small Sci
Panasci SE, Schilirò E, Greco G, Fiorenza P, Vivona M, Di Franco S, Roccaforte F, Esposito F, Bosi M, Attolini G, Píš I, Bondino F, Pedio M, Madonia A, Cannas M, Agnello S, Seravalli L, Giannazzo F.   +17 more
europepmc   +1 more source

Tuning Schottky Barrier of Single-Layer MoS₂ Field-Effect Transistors with Graphene Electrodes. [PDF]

Nanomaterials (Basel), 2022
Jang AR.
europepmc   +1 more source

2D Materials Empowered Radar Absorbing Materials: A Review

Advanced Electronic Materials, EarlyView.
Recent progress in 2D materials empowered radar absorbing materials (RAMs) is reviewed, highlighting four key structural design strategies that enhance electromagnetic wave absorption. Porous structures, heterogeneous interfaces, printed metamaterials, and tunable metasurfaces are compared in terms of their governing physics, fabrication complexity ...
Yujie Zhong, Shuncong Zhong, Yi Huang, Shan‐Tung Tu, Minghong Wu   +4 more
wiley   +1 more source

Direct Probing of Trap Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Using Single-Voltage-Pulse Characterization. [PDF]

Adv Sci (Weinh)
Vo TH, Kim S, Park JH, Jeon DW, Hwang WS, Hwang J.   +5 more
europepmc   +1 more source

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. [PDF]

Micromachines (Basel), 2022
Liu H, Liang Z, Meng J, Liu Y, Wang H, Yan C, Wu Z, Liu Y, Zhang D, Wang X, Zhang B.   +10 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

A new <i>in situ</i> method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces. [PDF]

Natl Sci Rev
Sirringhaus H.
europepmc   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source