Results 171 to 180 of about 657,960 (297)

Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes. [PDF]

Materials (Basel)
Lu S, Zhang X, Wang S, Li M, Jiao S, Liang Y, Wang W, Zhang J.   +7 more
europepmc   +1 more source

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. [PDF]

Micromachines (Basel), 2023
Mandal KC, Chaudhuri SK, Nag R.
europepmc   +1 more source

Reversible Exfoliation‐Aggregation Dynamics in Ionic COFs for Tunable Interfacial Catalysis

Advanced Science, EarlyView.
A unique ionic covalent organic framework (I‐4) exhibits unprecedented concentration‐dependent dynamic behavior in water, undergoing reversible transitions between aggregation and exfoliation. This enables fully controllable, bidirectional modulation of its particle size and surface micro‐environment.
Jilu Yang, Xiaofei Zhang, Yue Li, Yuping Cao, Zhaowei Jia, Bo Li, Haitao Feng, Xiaoqiang Cui, Wenwu Qin   +8 more
wiley   +1 more source

Schottky Barrier as Photodetector Based on Nanostructured Cd _<i>x</i> Zn_1-<i>x</i> S along with Switchable Photocurrent Generation. [PDF]

ACS Omega
Das P, Saha S, Bhunia AK.
europepmc   +1 more source

Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]

Materials (Basel), 2022
Jiao T, Chen W, Li Z, Diao Z, Dang X, Chen P, Dong X, Zhang Y, Zhang B.   +8 more
europepmc   +1 more source

Learning Work Function via Implicit Reasoning on Electrostatic Potential Landscapes

Advanced Science, EarlyView.
StructPot‐CLR establishes a cross‐modal contrastive learning framework that aligns the crystal structures of 2D materials with plane‐averaged electrostatic potential landscapes for physically informed work‐function prediction. The model achieves an MAE of 0.265 eV and an R2 of 0.902 on the held‐out test set while accurately preserving key morphological
Haoyu Wan, Yue Wu, Tianhao Su, Deng Pan
wiley   +1 more source

Au-Si Diffusion Effects on Surface Plasmon Resonance Sensor Using Internal Photoemission at Metal/Si Schottky Barrier. [PDF]

ACS Omega
Ukaji M, Abubakr E, Imai Y, Kan T.
europepmc   +1 more source

Schottky barrier height engineering on MoS₂ field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]

Discov Nano, 2023
Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation. [PDF]

Nanomaterials (Basel)
Qadir A, Ali M, Khaliq A, Karim S, Farooq U, Xu H, Yu Y.   +6 more
europepmc   +1 more source