Results 161 to 170 of about 657,960 (297)

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

open access: yesAdvanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande   +14 more
wiley   +1 more source

Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. [PDF]

open access: yesMaterials (Basel), 2023
Bernat R   +6 more
europepmc   +1 more source

Deciphering the Crystallinity‐Dependent Sensitivity of Charge Injection in n‐Channel Organic Transistors: Reliable Characterization and Optimized Performance

open access: yesAdvanced Science, EarlyView.
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili   +15 more
wiley   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors. [PDF]

open access: yesMicromachines (Basel)
Kopyev VV   +4 more
europepmc   +1 more source

Photovoltaic Schottky-barrier elements

open access: yes
A photovoltaic Schottky-barrier element comprising a semiconductor substrate carrying a ruthenium dioxide layer as the metallic contact thereof. A solar cell and a photochemical cell are also described comprising, as the photovoltaic element or electrode,
Gissler, Wolfram   +1 more
core  

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee   +6 more
wiley   +1 more source

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. [PDF]

open access: yesMaterials (Basel), 2023
Knezevic T   +5 more
europepmc   +1 more source

Detection of Degraded Formulated BaTiO3 Induced by Oxygen Vacancy Migration Using Ultrasonic Attenuation

open access: yesAdvanced Science, EarlyView.
Oxygen vacancy migration is a key degradation mechanism for the majority of MLCCs. There are limitations with spatially identifying regions of a capacitor that have degraded due to oxygen vacancy migration. This work showcases ultrasonic attenuation as a non‐electrical and nondestructive technique of identifying oxygen vacancy degraded regions of an ...
Haley N. Jones   +3 more
wiley   +1 more source

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