Results 161 to 170 of about 657,960 (297)
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande +14 more
wiley +1 more source
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. [PDF]
Bernat R +6 more
europepmc +1 more source
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili +15 more
wiley +1 more source
Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors. [PDF]
Kopyev VV +4 more
europepmc +1 more source
Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration. [PDF]
Park BJ, Kim HS, Hahm SH.
europepmc +1 more source
Photovoltaic Schottky-barrier elements
A photovoltaic Schottky-barrier element comprising a semiconductor substrate carrying a ruthenium dioxide layer as the metallic contact thereof. A solar cell and a photochemical cell are also described comprising, as the photovoltaic element or electrode,
Gissler, Wolfram +1 more
core
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee +6 more
wiley +1 more source
Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]
Milazzo S +4 more
europepmc +1 more source
Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. [PDF]
Knezevic T +5 more
europepmc +1 more source
Oxygen vacancy migration is a key degradation mechanism for the majority of MLCCs. There are limitations with spatially identifying regions of a capacitor that have degraded due to oxygen vacancy migration. This work showcases ultrasonic attenuation as a non‐electrical and nondestructive technique of identifying oxygen vacancy degraded regions of an ...
Haley N. Jones +3 more
wiley +1 more source

