Results 141 to 150 of about 657,960 (297)

Single‐Atom‐Enhanced Fully Inkjet‐Printed Electrochemical Sensor for Dopamine Detection

Advanced Science, EarlyView.
Fully inkjet‐printed paper‐based dopamine sensors are fabricated using nitrogen‐doped graphene acid functionalized with copper single atoms. The copper sites uniquely enhance dopamine oxidation through strong molecular adsorption, as verified by electrochemical measurements and DFT calculations. The approach highlights the potential of single‐atom inks
Martin‐Alex Nalepa, David Panáček, Vítězslav Hrubý, Matěj Jendrišák, Rostislav Langer, Michal Langer, Petr Jakubec, Ivan Dědek, Vojtěch Kupka, Michal Mazur, Radek Zbořil, Michal Otyepka   +11 more
wiley   +1 more source

Comparison of inhomogeneous Schottky barrier modeling approaches in SiC polytypes. [PDF]

PLoS One
Mekaret F, Rabehi A, Zebentout B, Tizi S, Douara A, Guermoui M, Tibermacine IE, Alharbi AH, El-Kenawy EM, Habib M, Benamara Z.   +10 more
europepmc   +1 more source

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

, 2010
The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a ...
Zhao DG (Zhao De-Gang), Hao XP (Hao Xiao-Peng), Liu ZS (Liu Zong-Shun), Wang H (Wang Hui), Zhang SM (Zhang Shu-Ming), Wei L (Wei Long), Jiang DS (Jiang De-Sheng), Liu WB (Liu Wen-Bao), Zhu JJ (Zhu Jian-Jun), Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn, Yang H (Yang Hui), Zhang S (Zhang Shuang)   +11 more
core  

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source

Improved DC Characteristic Modeling and Small-Signal Investigation of GaN Schottky Barrier Diodes. [PDF]

Micromachines (Basel)
Wang C, Tang L, Zhang A, Cheng J, Li C, Mao S, Xu Y, He Q, Guo T, Wang K, Wu C.   +10 more
europepmc   +1 more source

Characteristics of Aluminum-silicon Schottky Barrier Diode

, 1970
Aluminumn-type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed.
Yu, A. Y. C., Mead, C. A.
core  

Spectral‐Kinetic Synergy in Au‐Network Engineered FeTiO3: A Multi‐Field Coupling Strategy for Lunar In Situ Resource Utilization

Advanced Science, EarlyView.
How can humanity achieve lunar self‐sufficiency? We utilize Au topology networks to modify the abundant lunar ilmenite. This catalyst, under sunlight, can convert waste carbon dioxide into space fuel. This design leverages the moon's natural vacuum for green manufacturing, avoiding the waste of gold and serving as “artificial chloroplasts” to sustain ...
Yahang Wang, Quanxin Wang, Pakkin Leong, Shi Feng, Meng Wang, Runyang Mo, Xianjin Shi, Xiaohui Li, Gangqiang Zhu, Chipui Tang   +9 more
wiley   +1 more source

Enhancing the strain limit of stretchable organic transistors by Schottky barrier-dominated transport mode. [PDF]

Nat Commun
Fu Y, Zheng X, Wang S, Sun S, Wang Y, Wang Z, Huang Y, Li L, Chen X, Yang H, Li L, Hu W.   +11 more
europepmc   +1 more source

Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response

Advanced Science, EarlyView.
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang, Haozhe Wang, Zeke Liu, Yun Zhong, Zheng‐Hong Lu, Nazir P. Kherani   +5 more
wiley   +1 more source

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Li L, Liu M.   +14 more
europepmc   +1 more source