Results 141 to 150 of about 9,132 (212)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Scalable transition metal dichalcogenide memtransistor arrays with Schottky-barrier control for energy-efficient artificial neural networks. [PDF]

Nat Commun
Hou X, Zhang W, Duan S, Jin T, Geng X, Lin M, Cai Y, Mao J, Luo Y, Zhu J, Lin J, Chen W.   +11 more
europepmc   +1 more source

Aluminum‐Substituted Yttrium Iron Garnet Films With Perpendicular Anisotropy Grown on Silicon by Sputtering

Advanced Electronic Materials, EarlyView.
Ultrathin Al‐substituted YIG films with perpendicular magnetic anisotropy are sputter‐grown directly on Si/SiOx using an ultrathin AlOx buffer layer. Al diffusion reduces the saturation magnetization and stabilizes PMA via magnetoelastic effects. Pt/Al:YIG bilayers exhibit strong spin Hall magnetoresistance and efficient spin–orbit torque switching ...
Matteo Fettizio, Stefano Fedel, Saúl Estandía, Jesus Alejandro De Sousa, Can Onur Avci   +4 more
wiley   +1 more source

Dirac metallic FeB₂-induced low Schottky barrier and electrically tunable Schottky contact in FeB₂/MoS₂ van der Waals heterostructure. [PDF]

Nanoscale Adv
Nhan TT, Cuong NQ, Nguyen CV, Phuc HV.
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation. [PDF]

Nanomaterials (Basel)
Qadir A, Ali M, Khaliq A, Karim S, Farooq U, Xu H, Yu Y.   +6 more
europepmc   +1 more source

Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure. [PDF]

ACS Appl Electron Mater, 2022
Do HB, Zhou J, De Souza MM.
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe₂ Field-Effect Transistor. [PDF]

Nanomaterials (Basel)
Kim SH, Lee SY, Kim TJ, Kyhm K, Watanabe K, Taniguchi T, Yee KJ.   +6 more
europepmc   +1 more source

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors. [PDF]

Nanomaterials (Basel), 2022
Huang Y, Yang J, Zhao D, Zhang Y, Liu Z, Liang F, Chen P.   +6 more
europepmc   +1 more source