Results 201 to 210 of about 657,960 (297)
Deep Learning Method for Breakdown Voltage and Forward <i>I-V</i> Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes. [PDF]
Zhou H +7 more
europepmc +1 more source
Nebulized BN@NF nanozymes integrate boron nanosheets with Nd‐doped iron phosphide to form a sono‐magneto‐responsive Z‐scheme heterostructure. Under ultrasound and magnetic activation, BN@NF amplifies ROS generation, eradicates bacteria, disrupts biofilms, and reshapes pulmonary inflammation through NF‐κB suppression, mitophagy promotion, and M1‐to‐M2 ...
Xiaofeng Luo +6 more
wiley +1 more source
Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes. [PDF]
Ren Y +11 more
europepmc +1 more source
In this work, we present a bile‐based memristor hardware framework that enables direct, label‐free identification of cholelithiasis and gallbladder cancer at the device level. The Ag/bile/FTO memristor features stable resistive switching and disease‐specific electrical responses, providing a conceptual foundation for circuits and an integrated ERCP ...
Junming Zhu +17 more
wiley +1 more source
Drift of Schottky Barrier Height in Phase Change Materials. [PDF]
Nir-Harwood RG +10 more
europepmc +1 more source
We develop a ligand engineering strategy to construct Ni‐diketimine‐linked COFs with precisely tuned Ni electronic states. By varying the coordinated diketone units, we achieve an optimal electronic configuration that enhances O2 adsorption and lowers the energy barrier for •O2− generation.
Guihong Wu +5 more
wiley +1 more source
Schottky barrier in pea-like Au@Bi<sub>2</sub>S<sub>3</sub> nanoreactor enabling efficient photodynamic therapy of hepatocellular carcinoma. [PDF]
Tao L +10 more
europepmc +1 more source
This work presents a multifunctional ionic liquid, [SO3H‐PMIm][OTf], that addresses A‐site cation inhomogeneity and lead toxicity in pure‐iodide wide‐bandgap perovskite solar cells. The additive enables homogeneous cation distribution, achieving 22.02% efficiency with 90% retention after 3000 h and reducing lead leakage by over 58%, thereby ...
Kai Wu +8 more
wiley +1 more source
Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga<sub>2</sub>O<sub>3</sub> (001) Trench Schottky Barrier Diodes Using H<sub>3</sub>PO<sub>4</sub> Treatment. [PDF]
Kim MY +4 more
europepmc +1 more source

