Dual-Functional Schottky-Barrier-Free Plasmonic TiN/TiO<sub>2</sub> Photocatalyst for Efficient NH<sub>3</sub> and H<sub>2</sub> Production. [PDF]
Bai X +8 more
europepmc +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal. [PDF]
Zhang X +7 more
europepmc +1 more source
Novel Optical Functionalities in Memristors
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro +6 more
wiley +1 more source
A multistimuli responsive and self-healing Zn(ii)-inosine supramolecular metal-organic gel: phase selective gelation and application as a light-responsive Schottky barrier diode. [PDF]
Singh S +4 more
europepmc +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source

