Results 241 to 250 of about 657,960 (297)
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Schottky barrier: models and “tests”
Surface Science Letters, 1983Abstract The concepts employed and models referred to in discussing metal-semiconductor interfaces are briefly discussed. The current status of experimental studies of a few such systems is examined. We emphasize the necessity of distinguishing between different possible mechanisms involved in determining the properties of these interfaces, and point
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Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs
ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007Current transport mechanisms of Schottky barrier (SB) and modified Schottky barrier (MSB) MOSFETs are investigated by measuring the temperature effect on current-voltage characteristics. For SB MOSFETs, current transport could be dominated by thermionic emission or tunneling mechanism depends on the Schottky barrier height and the gate voltage.
null Bing-Yue Tsui, null Chi-Pei Lu
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On the inhomogeneity of Schottky barriers
Materials Science and Engineering: B, 1992Abstract It is shown that the wide diversity of behavior observed from common Schottky barriers is difficult to reconcile with the traditional view of a homogeneous barrier height which is determined by Fermi level pinning, but is consistent with the presence of inhomogeneities in the barrier height.
R.T. Tung, J.P. Sullivan, F. Schrey
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Schottky and Bardeen limits for Schottky barriers
Journal of Vacuum Science and Technology, 1979An estimate for the minimum (Bardeen limit) and maximum (Schottky limit) of the interface index, S, is calculated. It is shown that current measurements on high S materials are near or at the maximum value for S.
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IETE Journal of Research, 1972
Schottky barriers have been made by evaporation of indium at a pressure of 1 × 10−6 torr onto chemically prepared n-GaAs. Ohmic contacts to the samples have been made by alloying In-Au composition (90:10 by wt) at a temperature of 550°C for 30 sec. Barrier height has been determined by using (i) C-V method, (ii) photoelectric method, and (iii) forward ...
V. K. Handu, M. S. Tyagi
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Schottky barriers have been made by evaporation of indium at a pressure of 1 × 10−6 torr onto chemically prepared n-GaAs. Ohmic contacts to the samples have been made by alloying In-Au composition (90:10 by wt) at a temperature of 550°C for 30 sec. Barrier height has been determined by using (i) C-V method, (ii) photoelectric method, and (iii) forward ...
V. K. Handu, M. S. Tyagi
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Theoretical models of Schottky barriers
Thin Solid Films, 1981ABSTRACTA review is presented in which existing theories of the formation of Schottky barriers are analyzed. The list includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments. The central role of interface states and their different physical origins are assessed. Simple concepts, able to predict general trends in
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1992
The classical Schottky barrier is introduced. The Schottky approximation is initially used with parameters listed and F(x) and Ψ(x) are given. The zero current solution for n(x). Diffusion potential and junction field is given. The Debye length and barrier width are defined. The accuracy of the Schottky approximation is discussed.
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The classical Schottky barrier is introduced. The Schottky approximation is initially used with parameters listed and F(x) and Ψ(x) are given. The zero current solution for n(x). Diffusion potential and junction field is given. The Debye length and barrier width are defined. The accuracy of the Schottky approximation is discussed.
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On the Potential Barrier of Schottky Junctions
Physica Status Solidi (a), 1972It is shown on the basis of the thermionic emission model, how the effective potential barrier height φBn 0 at 0 °K, its mean temperature coefficient , and its temperature coefficient αT for different temperatures can be determined from the forward i–U charactreristics of Schottky junctions. The derived equations were examined with data from literature
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Journal of Applied Physics, 1972
Metal surface barriers consisting of gold, nickel, tantalum, and aluminum on zinc telluride have been investigated. The behavior of gold and nickel barriers agrees with simple thermionic Schottky barrier theory. The barrier height found for gold is 0.64 eV and for nickel 0.65 eV.
W. D. Baker, A. G. Milnes
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Metal surface barriers consisting of gold, nickel, tantalum, and aluminum on zinc telluride have been investigated. The behavior of gold and nickel barriers agrees with simple thermionic Schottky barrier theory. The barrier height found for gold is 0.64 eV and for nickel 0.65 eV.
W. D. Baker, A. G. Milnes
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Contemporary Physics, 1982
Abstract The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made ...
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Abstract The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made ...
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