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1984
In general, the detectors used for detecting electromagnetic radiation fall into one of two categories: (1) classical or thermal detectors and (2) quantum or photon detectors.
S. C. Gupta, H. Preier
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In general, the detectors used for detecting electromagnetic radiation fall into one of two categories: (1) classical or thermal detectors and (2) quantum or photon detectors.
S. C. Gupta, H. Preier
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The Problem of Schottky Barrier
1992A short historical survey will be made of metal-semiconductor research and of the most widely used theoretical models that have tried to explain the physical reasons for the formation of a Schottky barrier. Among them the Schottky model, the interface states model, the metal-induced gap states (MIGS) model and the defect model will be reviewed ...
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Tunneling in Schottky barriers
1970The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship.
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Schottky barriers and plasmons
Journal of Vacuum Science and Technology, 1974The changes in the electron exchange and correlation potential are related to the collective excitation at the interface of a metal semiconductor junction. They are shown to change discontinuously across the band gap, and the possible effects on the barrier formation are discussed.
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The Schottky Barrier Photodiode
1992The Schottky barrier acts to separate optically generated minority carriers from the majority carriers that are collected from a bulk layer extending a couple of diffusion lengths from the barrier. As an ideal Schottky diode, however, it is unable to produce a respectable photovoltaic light-to-electric power conversion since it maintains the same ...
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Investigation of Schottky Barriers
1988Abstract : This final report summarizes the technical progress made under the auspices of AFOSR Contract F49620-86-K-0018. Substantial progress was made in two key areas: electronic structure studies of the Schottky barrier and transport studies. With respect to the electronic structure component, we applied ab initio electronic structure techniques to
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Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics
Advanced Materials, 2021Xiankun Zhang, Yue Zhang, Zheng Zhang
exaly