Results 231 to 240 of about 657,960 (297)

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Some of the next articles are maybe not open access.

Related searches:

On the width of Schottky barriers

Solid-State Electronics, 1982
Abstract The paper presents numerical computations of the Schottky barrier width, made by taking the free carrier space charge into account, and points to substantial discrepancies between the actual and conventionally assumed volume as a function of current.
Moreau, Y., Manifacier, J.-C., Henisch, H.K.   +2 more
openaire   +2 more sources

Schottky barriers to CdS and their importance in Schottky barrier theories

Semiconductor Science and Technology, 1989
A study of the transport properties of Schottky barriers to the vacuum- and air-cleaved surfaces of CdS have yielded a wide range of barrier heights which, contrary to popular belief, show no linear correlation with the metal work function. The characteristics have shown a strong dependence on the methods of preparation and subsequent treatment of the ...
N M Forsyth, I M Dharmadasa, Z Sobiesierski, R H Williams   +3 more
openaire   +1 more source

From heterojunctions to Schottky barriers

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
The relations between Schottky barriers and heterojunctions were explored by studying heterojunction band lineups with metal intralayers, as a function of the intralayer thickness. The results can be explained by introducing Schottky-like terms in midgap-energy models. Such terms, however, do not imply the formation of a truly metallic intralayer.
D. W. Niles, M. Tang, J. Mckinley, ZANONI, Robertino, G. Margaritondo   +4 more
openaire   +2 more sources

The physics of Schottky barriers

Journal of Physics D: Applied Physics, 1970
A review is given of the physical processes which determine the height of the barrier and the current-voltage relationship in a metal-semiconductor Schottky barrier.
openaire   +1 more source

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Journal of Applied Physics, 1987
A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins   +7 more
openaire   +1 more source