Results 211 to 220 of about 657,960 (297)

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence

Advanced Science, EarlyView.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang, Fanyi Meng, Fanying Meng, Shida Huo, Junxi Xu, Yaohui Wang, Yuexuan Ma, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +10 more
wiley   +1 more source

Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention. [PDF]

Discov Nano
Kim H, Kim Y, Oh K, Park JH, Baek CK.
europepmc   +1 more source

Acoustically Activatable Drug‐Loaded Nanodroplets for Mechanochemical Therapy in Solid Tumors

Advanced Science, EarlyView.
Microfluidically fabricated drug‐loaded nanodroplets are sequentially activated by dual‐frequency ultrasound through acoustic droplet vaporization followed by bubble collapse, enabling spatially controlled drug release and mechanical tumor fractionation, resulting in synergistic mechanochemotherapy and prolonged survival.
Tiran Bercovici, Mike Bismuth, Meir Goldsmith, Dan Peer, Tali Ilovitsh   +4 more
wiley   +1 more source

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS₂/metal contacts. [PDF]

Sci Rep
Zhao X, Xia C, Li L, Wang A, Cao D, Zhang B, Fang Q.   +6 more
europepmc   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

Advanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei, Shichen Zhang, Zhipeng Zheng, Miao Cai, Shun Tang, Xuguang Guo, Yiming Zhu   +6 more
wiley   +1 more source

Optimized nano-scaled drain- and gate-engineered Schottky barrier MOSFET with improved ambipolarity and RF characteristics. [PDF]

Nanoscale Adv
Bashir F, Alzahrani AS, Zahoor F.
europepmc   +1 more source

Dual Randomness From Spatial and Temporal Variations in Stochastic Zinc Gallate Nanoclusters for PUF and TRNG Co‐Driven Image Generation

Advanced Science, EarlyView.
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang, Wangmyung Choi, Jueun Lee, Yeong Kwon Kim, Byung Chul Jang, Wonjun Shin, Hocheon Yoo   +6 more
wiley   +1 more source

Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition. [PDF]

ACS Appl Electron Mater
Davis BE, Strandwitz NC.
europepmc   +1 more source

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

Advanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee, Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim   +3 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source