Results 221 to 230 of about 1,488,769 (288)

Determinants of electron transport at asymmetric metal/molecule/metal contacts. [PDF]

Nat Commun
Su G, Feng R, Zhao Y, Zhang IY, Liu W.
europepmc   +1 more source

Surface Termination Unlocks Photocatalytic Potential: Reshaping Structure and Electronics in Ultrathin MoS2/TiO2 Heterojunctions

Solar RRL, Volume 10, Issue 18, 28 September 2026.
Systematic ab initio calculations reveal the impact of anatase TiOA2$\ce {TiO2}$ (001) surface terminations on TiOA2$\ce {TiO2}$/MoSA2$\ce {MoS2}$ heterostructures. Both (1 × 1) and reconstructed (1 × 4)‐ADM interfaces exhibit type‐II alignment, extended visible‐light absorption, and reduced bandgaps.
Costanza Borghesi, Marta Loletti, Carlo Cantalini, Riccardo Rurali, Giacomo Giorgi   +4 more
wiley   +1 more source

Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors. [PDF]

ACS Photonics
David M, Dabrowska A, Sistani M, Song Z, Maraspini F, Wu Y, Wenk M, Fuchsberger A, Vogl L, Schweizer P, Szedlak R, Schwarz B, Weber WM, Strasser G, García de Abajo FJ, Darmo J, Lendl B, Lugstein A.   +17 more
europepmc   +1 more source

Direct Sputtering Deposition of a Zn1−xGexOx+1 Buffer Layer With a Controllable Conduction Band for Cd‐Free Cu(In,Ga)S2 Solar Cells

Solar RRL, Volume 10, Issue 18, 28 September 2026.
This work presents the development of n‐type Zn1−xGexOx+1 using radiofrequency magnetron sputtering to suppress interface recombination at the heterojunction of Cu(In,Ga)S2 (CIGS) solar cells. The solar cell device with the Zn1−xGexOx+1 buffer layer directly deposited on CIGS absorbers demonstrates a conversion efficiency comparable to that of a device
Yota Suzuki, Hiromu Kobayashi, Yuta Yoshino, Takahito Nishimura   +3 more
wiley   +1 more source

Impact of 2D <i>h</i>-BN Interlayer on Leakage Mechanisms and Device Performance Optimization in High-Reliability <i>β</i>-Ga₂O₃ MIS Devices. [PDF]

Nanomaterials (Basel)
Li Y, Zhang J, Liu W, Wang L, Xie J, Xu J, Yu C.   +6 more
europepmc   +1 more source

A Universal Approach to Enhancing Silicon Hot-Carrier Photodetectors for CMOS-Compatible SWIR Imaging. [PDF]

Adv Sci (Weinh)
Ryu EH, Ko HW, Hwang S, Kim N, Son JH, Han S, Seo PH, Hong J, Kim SJ, Yoon SK, Park MC, Lee IH.   +11 more
europepmc   +1 more source

Reversible dielectric polymers with switchable conduction and insulation for electrostatic protection. [PDF]

Nat Commun
Xu H, Xie C, Chen H, Luo T, Zhang D, Zhong A, Bi C, Gou B, Zhou J, Wang Q, Yang X, Huang S, Yi Y, Zhang Y, Han Y, Hu XM, Wang R.   +16 more
europepmc   +1 more source

Schottky barrier engineering

, 2014
Zhang, Zhen
core  

Effects of boron and nitrogen doping on the electronic properties of graphene-based heterostructures with two-dimensional semiconducting materials. [PDF]

PLoS One
Liu Z, Huang P, Luo Y, Huang P.
europepmc   +1 more source

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Schottky barrier height in GaN/AlGaN heterostructures

Solid-State Electronics, 2006
We present a modified expression for PhiB that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier ...
A F M Anwar
exaly   +3 more sources