Results 231 to 240 of about 1,488,769 (288)

Quantitative explanation of the Schottky barrier height

Physical Review B, 2021
Eight decades ago, Schottky proposed that the energy barrier at the metal-semiconductor interface, which now bears his name, should be compared with the difference of two surface quantities, the work function (WF) of the metal and the ionization potential of the semiconductor.
Raymond T. Tung, Leeor Kronik
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Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Superlattices and Microstructures, 2006
International audience4.5 kV SiC Schottky diodes have been fabricated using Ni as the Schottky contact. A manufacturing yield of 40% is reached for the bigger area diodes (1.6 x 1.6 mm(2)) and of 70% for the smaller ones (0.4 x 0.4 mm(2)).
Josep Montserrat, Philippe Godignon
exaly   +2 more sources

Schottky-barrier devices with low barrier height

Proceedings of the IEEE, 1974
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
K. Kajiyama, S. Sakata, Y. Mizushima
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Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Journal of Applied Physics, 1987
A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins   +7 more
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Schottky Barrier Height of Phosphidized InGaAs

Japanese Journal of Applied Physics, 1993
The Schottky barrier height of phosphidized InGaAs has been studied. The surface of InGaAs (In 53%) lattice-matched to InP is treated with gentle phosphine plasma. Schottky junctions are then formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Ag.
Takashi Sugino, Yoshifumi Sakamoto Yoshifumi Sakamoto, Junji Shirafuji Junji Shirafuji   +2 more
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Natural nonuniformities in the height of a Schottky barrier

Semiconductors, 1998
This paper discusses natural nonuniformities in the height of a Schottky barrier caused by the discreteness of impurity charges randomly distributed in the depletion region. The parallel-diode model is used to show that these natural fluctuations in the effective barrier height at a metal-semiconductor junction, on the average, do not exceed kT at room
V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, V. V. Korablev   +3 more
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CESIUM-GaAs SCHOTTKY BARRIER HEIGHT

Applied Physics Letters, 1967
The Schottky barrier height at the interface of cesium metal and vacuum-cleaved p-type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.
John J. Uebbing, Ronald L. Bell
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Fluctuations in Schottky barrier heights

Journal of Applied Physics, 1984
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by ...
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Barrier heights of GaN Schottky contacts

Applied Surface Science, 1997
Abstract Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of ...
Thorsten U. Kampen, Winfried Mönch
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Schottky-barrier height of iridium silicide

Applied Physics Letters, 1978
Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500 °C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the
I. Ohdomari, K. N. Tu, F. M. d’Heurle, T. S. Kuan, S. Petersson   +4 more
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