Results 251 to 260 of about 1,488,769 (288)

Dependence of Schottky Barrier Height on Donor Concentration

Journal of Applied Physics, 1970
Schottky barrier heights of Au contacts to n-type Si with either etch-polished or vacuum-cleaved interfaces are independent of donor concentration within an experimental uncertainty of about ±0.05 eV for 1014 cm−3≤ND≤1019 cm−3. Within the same uncertainty and over the same doping range, barrier heights determined from capacitance using the standard ...
R. J. Archer, T. O. Yep
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A reliable Schottky barrier height extraction procedure

2016 International Conference on Microelectronic Test Structures (ICMTS), 2016
This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated.
Bing-Yue Tsui, Tze-Yu Fu
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Temperature dependence of Schottky barrier heights on silicon

Journal of Applied Physics, 1993
We investigate the temperature dependence of Schottky barrier heights on silicon. The analysis of a large variety of polycrystalline diodes shows that the temperature coefficient of the barrier height depends on the chemical nature of the metal. This observation is in contradiction with models suggesting Fermi-level pinning at the center of the ...
Jürgen H. Werner, Herbert H. Güttler
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Barrier height modification in Schottky MIS diodes

Physics Letters A, 1982
Abstract Expressions for the potential barrier height of Schottky MIS diodes having gaussian doping profiles are derived and solved numerically both at thermal equilibrium and in the presence of applied voltages. The possibility of barrier height modification using a thin highly doped surface layer is discussed.
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Optimal barrier height for Schottky diode rectifiers

International Journal of Electronics, 1984
An elementary analysis reveals that an optimal barrier height exits for a Schottky barrier diode used as a rectifier. Techniques available to modify the Schottky barrier can be readily applied to achieve the desired barrier height.
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Schottky Barrier Heights of Refractory Metals on Silicon

MRS Proceedings, 1986
AbstractMeasurements of Schottky-barrier heights in the temperature range 175-295 K for refractory metal-silicon and corresponding silicide-silicon interfaces are presented. Refractory metal silicide formation is shown to have only a small effect on the barrier height.
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On the Schottky barrier height of metal-GaAs systems

Physica Status Solidi (a), 1972
G. B. Seiranyan, Yu. A. Tkhorik
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Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer

ACS Applied Electronic Materials, 2023
You Seung Rim, Nouredine Sengouga, Madani Labed   +2 more
exaly  

Comments on "Schottky-barrier devices with low barrier height"

Proceedings of the IEEE, 1975
A.C. MacPherson, H.M. Day, K. Kajiyama, S. Sakata, Y. Mizushima   +4 more
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On the enhancement of effective barrier height in Schottky barrier diodes

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
S. Arulkumaran, J. Arokiaraj, N. Dharmarasu, J. Kumar   +3 more
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