Results 241 to 250 of about 1,488,769 (288)
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Optimum barrier height for Schottky-barrier detectors
Journal of Physics D: Applied Physics, 1982Performance characteristics of Schottky-barrier detectors are investigated in terms of their physical parameters. It is shown that the detector cut-off frequency and responsivity-bandwidth product can be maximised while the level of minimum detectable power can be minimised by the proper choice of detector parameters.
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Microstructure and Schottky-barrier height of the Yb/GaAs interface
Physical Review B, 1989Different interfacial structures are found for Yb/GaAs(001) contacts with different Yb thicknesses, namely 3 and 20 A\r{}, by grazing-incidence x-ray diffraction with the use of synchrotron radiation. Different Schottky-barrier height values are also found for these samples.
, Hirose +5 more
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Fluctuations of the Au-Si(100) Schottky barrier height
Physical Review Letters, 1993Schottky barrier height fluctuations of Au films on Si(100) are directly imaged with nm-scale resolution by ballistic electron emission. Fluctuations are made visible by using a highly doped (N d ≃10 17 cm -3 ) substrate. Randomly distributed (approximately 10 -3 cm -2 ) spots (about 2 nm in diameter) of reduced barrier height (typical ΔΦ=20-50 meV ...
, Palm, , Arbes, , Schulz
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Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 2005The effect of dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky barrier MOSFETs (SB-MOSFETs) is investigated. Ion implantation with arsenic and boron and subsequent silicidation is used to create highly n- and p-doped interface layers at the silicide-silicon interface.
M. Zhang +5 more
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Metal/n-GaP Schottky barrier heights
Solid-State Electronics, 1979Abstract A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured.
Tan F. Lei, Chung L. Lee, Chun Y. Chang
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Barrier Height of Titanium Silicide Schottky Barrier Diodes
Japanese Journal of Applied Physics, 1986Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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Interface states and the barrier height of Schottky diodes
Physics Letters A, 1993Abstract The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height.
M. Wittmer, J.L. Freeouf
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Schottky Barrier Height in Fe/GaAs Films
IEEE Transactions on Magnetics, 2010We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 × 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes,
L. R. Fleet +7 more
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New method for control of Schottky-barrier height
Applied Physics Letters, 1981Ultrathin reactive Al interlayers at ultrahigh vacuum-cleaved Au-CdS, CdSe single-crystal interfaces have been used to continuously tune the effective Schottky-barrier height over the full range reported for metals on these prototypical II-VI semiconductors, i.e., 0–0.8 eV.
C. F. Brucker, L. J. Brillson
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A composite model for Schottky diode barrier height
IEEE Transactions on Electron Devices, 1971A composite model, which includes both electrostatic screening and an interfacial region, is developed for Schottky diode barrier height. The model is used to calculate barrier height as a function of donor concentration for a gold-on-silicon diode structure.
G.W. Eimers, E.H. Stevens
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