Results 121 to 130 of about 47,292 (298)
Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN. [PDF]
Nanomaterials (Basel), 2020 Lee M +7 more
europepmc +1 more source
Pulsed DC Sputter Deposition of Stable Turbostratic Boron Nitride Thin Films
Advanced Materials Interfaces, EarlyView.Boron nitride (BN) films are deposited by sputtering from a boron target. During deposition, a substrate bias voltage is applied between the plasma and the sample, which reduces excess boron in the film and enhances the crystallinity. This process prevents the formation of boric acid and ammonium borate hydrate.
Josef Schätz +9 more
wiley +1 more source
, 2005 A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric
Braeunlich P. +10 more
core +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.Flexible Chitosan‐glycerol sensor integrated with porous laser‐induced graphene (LIG) electrodes enable room‐temperature chemiresistive detection of ammonia (NH3) and proof‐of‐concept detection of fish spoilage. ABSTRACT We report a metal‐free sensor platform combining laser induced graphene (LIG) electrodes with drop‐deposited, glycerol‐plasticized ...
Mintesinot Tamiru Mengistu +9 more
wiley +1 more source
Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications
Advanced Electronic MaterialsBeta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology.
Gyeong Seop Kim +4 more
doaj +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, EarlyView.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo +12 more
wiley +1 more source
Advanced Science, EarlyView.This review provides a comprehensive exploration of microstructure regulation strategies for multi‐principal element alloy‐based films and coatings, with a focus on the interplay between elemental composition, nanoscale architecture, heterostructures and interfacial engineering in tailoring their properties and functions. A systematic analysis of their
Jiaming Cao +4 more
wiley +1 more source
Advanced Science, EarlyView.This study employs a nanochain engineering approach combined with an in situ oxidation strategy to fabricate self‐insulating iron‐based magnetic nanochains, addressing the challenge of balancing magnetic coupling and electrical insulation in soft magnetic materials.
Dingrong Zuo +8 more
wiley +1 more source