Results 161 to 170 of about 47,292 (298)
In this study, FeCoNiCuPt high‐entropy alloy particles (HEA) are loaded onto protonated g‐C3N4 nanosheets (HCN NSs) to construct HEA/HCN composites through an electrostatic self‐assembly method. Protonation treatment enriches the surface of g‐C3N4 nanosheets with abundant active sites and enhances their interfacial charge separation capability ...
Yunzhu Zang +3 more
wiley +1 more source
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Electrical Contacts to MoS<sub>2</sub> with Covellite (CuS): The Contact Type and Schottky Barrier Modulation. [PDF]
Huai MJ +5 more
europepmc +1 more source
Electrides offer unique opportunities as catalyst supports for hydrogen evolution reactions. This study presents an electride‐supported Ru/Nd2ScSi2 catalyst exhibiting outstanding hydrogen evolution reaction performance and excellent stability. Anionic Ru species on the electride surface facilitate water dissociation and optimize hydrogen adsorption ...
Zhiqi Wang +5 more
wiley +1 more source
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection. [PDF]
Sangregorio E +5 more
europepmc +1 more source
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush +9 more
wiley +1 more source
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
Reversible dielectric polymers with switchable conduction and insulation for electrostatic protection. [PDF]
Xu H +16 more
europepmc +1 more source

