Results 241 to 250 of about 47,292 (298)
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Schottky contacts on annealed GaAs
Thin Solid Films, 1982Unimplanted n-type GaAs epitaxial layers have been annealed under the same conditions as those required to activate ion implants. If the duration of the anneal is sufficiently long (e.g. 10 min at 800°C) acceptor ions accumulate at the surface with a concentration of about 2×1022 m−3.
R. E. Miles +3 more
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Schottky Barrier on W-GaAs Contact
Physica Status Solidi (a), 1978Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W-n-GaAs structures prepared in such way increases exponentially over five decades in accordance with the theory of the thermionic electron emission from the semiconductor to the metal. The Schottky barrier height
P. M. Batev +3 more
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Metal Contacts on InN: Proposal for Schottky Contact
Japanese Journal of Applied Physics, 2006Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable.
Rangel-Kuoppa, Victor-Tapio +3 more
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Metal-n-ZnSiP2 Schottky Contacts
Physica Status Solidi (a), 1978Schottky contacts are produced on n-type ZnSiP2 crystals by means of electroless deposition of Ni or Au as well as by vacuum evaporation of Au. The barrier heights are determined by photoemission and C–U measurements. The analysis of the I–U characteristic and its temperature dependence yields information about the dominat current mechanisms.
G. Kühnel, W. Siegel, E. Ziegler
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Schottky-contact coupling between Schottky-electrode-triggered Gunn elements
IEEE Transactions on Electron Devices, 1979Signal transmissions between Schottky-electrode-triggered Gunn elements are investigated when an output electrode, also of Schottky type, is directly coupled to a trigger electrode of the next stage. Expressions are derived that describe the voltages across the two Schottky barriers when the barriers behave as pure capacitances.
N. Hashizume, S. Kataoka, K. Tomizawa
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Metal Semiconductor Contacts Schottky Diodes
2023Metal-Semiconductor-Junction is also called heterojunction since the material on each side of the junction is not identical. The normal pn junction diode concept can also be applied here. There are two probable types of metal.semiconductor junctions: Schottky junction and ohmic junction.
Sunipa Roy +3 more
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Direct-Schottky-contact InP MESFET
IEEE Electron Device Letters, 1991The design and fabrication of an InP MESFET with excellent I-V characteristics are reported. A record high transconductance of 110 mS/mm was measured for a 1- mu m gate length direct-Schottky-contact InP MESFET, where the InP surface was not passivated or treated prior to the deposition of the gate contact.
Z. Abid +3 more
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Schottky Contacts Electrical Parameters Modelling
2006 1st Electronic Systemintegration Technology Conference, 2006The main purpose of the work is modelling and determination of electrical parameters of Schottky contacts using their Voltage-Current Characteristics. In this case a model of a uniform is normally used within a forward bias values less than 10 V. For non-uniform metal-semiconductor contacts we have proposed and used the more complicated method of ...
Valentine Baranov +2 more
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1994
Experiments on rectifying contacts started in 1874 with the pioneering work of Braun who observed asymmetries in transport of electrical current across metal/semiconductor interfaces [3.1]. The following decades brought out a variety of technical applications, but it took more than sixty years until Schottky [3.2] and, independently, Mott [3.3] gave ...
Jürgen H. Werner, Uwe Rau
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Experiments on rectifying contacts started in 1874 with the pioneering work of Braun who observed asymmetries in transport of electrical current across metal/semiconductor interfaces [3.1]. The following decades brought out a variety of technical applications, but it took more than sixty years until Schottky [3.2] and, independently, Mott [3.3] gave ...
Jürgen H. Werner, Uwe Rau
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Barrier inhomogeneities at Schottky contacts
Journal of Applied Physics, 1991We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also
Jürgen H. Werner, Herbert H. Güttler
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