Results 41 to 50 of about 47,292 (298)

An assessment of contact metallization for high power and high temperature diamond Schottky devices [PDF]

, 2012
Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage (I–V) characteristics, the series resistance and the thermal stability are discussed in the ...
Achard, Jocelyn, Alexis, Joël, Isoird, Karine, Issaoui, Riadh, Koné, Sodjan, Msolli, Sabeur, Schneider, Henri, Thion, Fabien   +7 more
core   +3 more sources

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Micromachines, 2022
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
doaj   +1 more source

Evaluation of SiC Schottky Diodes Using Pressure Contacts [PDF]

IEEE Transactions on Industrial Electronics, 2017
The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although
Ortiz Gonzalez, Jose, Alatise, Olayiwola, Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, Philip, Bailey, Chris   +7 more
openaire   +1 more source

Melt Grafting of Geometry‐Tailored Voltage Stabilizers for High‐Performance Polypropylene Insulation

Advanced Functional Materials, EarlyView.
A scalable one‐step melt grafting strategy is developed to enhance the dielectric properties of isotactic polypropylene by covalently incorporating thermally stable aromatic voltage stabilizers. This solvent‐free approach improves volume resistivity and DC breakdown strength through deep trap formation and charge localization, offering a sustainable ...
Nazirul Mubin bin Normansah, Taehoon Kwon, Hana Kim, Shin‐Ki Hong, Seung Won Lee, Se Hee Lee, Ik‐Su Kwon, Masahiro Kozako, Minhee Kim, Seunggun Yu   +9 more
wiley   +1 more source

Schottky barrier formation and band bending revealed by first principles calculations

, 2015
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania ...
Fang, Yurui, Gao, Shiwu, Hellman, Anders, Jiao, Yang, Käll, Mikael   +4 more
core   +1 more source

Electrical properties of individual tin oxide nanowires contacted to platinum electrodes [PDF]

, 2007
A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed.
Barth, S., Casals Guillén, Olga, Hernández Ramírez, Francisco, Mathur, Sanjay, Morante i Lleonart, Joan Ramon, Pellicer Vilà, Eva M., Rodríguez, J., Romano Rodríguez, Albert, Tarancón Rubio, Albert   +8 more
core   +3 more sources

Efficient NiOx Hole Transport Layers Enabled by Multifunctional MXenes for High‐Performance Tin‐Lead Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen, Guanqi Tang, Yanghou Wang, Xiaolong Cao, Junjun Jin, Jie Tang, Liyang Yu, Zheng Zhou, Peng You, Hanlin Hu, Weiqing Yang, Qidong Tai, Feng Yan   +12 more
wiley   +1 more source

Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]

AIP Advances
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha, Vijayakumar Subramanian, Ved Krishna, Konstantinos Floros, Ingo Ludtke, Shanthi Subashchandran, S. Ganesamoorthy, Naresh Gunasekar   +7 more
doaj   +1 more source

Method for fabricating solar cells having integrated collector grids [PDF]

, 1979
A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the ...
Evans, J. C., Jr.
core   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source