Results 51 to 60 of about 47,292 (298)

Ohmic contacts to n-type germanium with low specific contact resistivity [PDF]

, 2012
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10^-7 Ω-cm² for anneal temperatures of ...
D. J. Paul, D. R. Leadley, I. MacLaren, K. Gallacher, M. Myronov, Massalski T. B., P. Velha, Pfisterer H., Schroder D. K.   +8 more
core   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj  

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

, 2012
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature ...
Appenzeller J., Appenzeller J., Asenov A., Bachtold A., Bjork M. T., Bucher E., Cai W., Chen Z., Cui Y., Derycke V., Gambino J., Gentile P., Georgios Katsaros, Heinzig A., Huang Y., Iwai H., Koren E., Lee J. U., Leonard F., Martin D., Massimo Mongillo, McAlpine M. C., Morimoto T., Mueller T., Murarka S. P., Panayotis Spathis, Pascal Gentile, Patolsky F., Perea D. E., Pierre M., Silvano De Franceschi, Storm K., Tung R. T., Weber W. M., Yang C., Yang C., Yang W.   +36 more
core   +3 more sources

Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment [PDF]

, 2008
Au contacts were deposited on n -type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2 O2 pretreatment were Ohmic and those with H2 O2 pretreatment were ...
Beling, CD, Chen, XD, Cheung, CK, Djurišić, AB, Fung, S, Gu, QL, Ling, CC, Lu, LW, Ng, AMC, Ong, HC   +9 more
core   +1 more source

Lithium Intercalation in the Anisotropic Van Der Waals Semiconductor CrSBr

Advanced Functional Materials, EarlyView.
We report the lithium intercalation in the layered van der Waals crystal CrSBr, revealing strongly anisotropic ion‐migration dynamics. Optical and electrical characterization of exfoliated CrSBr shows lithium diffusion coefficients that differ by more than an order of magnitude along a‐ and b‐directions, consistent with molecular dynamics simulations ...
Kseniia Mosina, Aljoscha Söll, Jiří Šturala, Martin Veselý, Petr Levinsky, Ondřej Kaman, Florian Dirnberger, Giuliana Materzanini, Nicola Marzari, Gian‐Marco Rignanese, Borna Radatović, Vlastimil Mazánek, David Sedmidubský, Zdeněk Sofer   +13 more
wiley   +1 more source

Suppression of Photo‐Mediated Traps in Integrated Organic Photovoltaic–Photodetector Devices via N‐Type Self‐Assembly‐Driven Interfacial Engineering

Advanced Functional Materials, EarlyView.
Conventional unstable electron transport layers (ETLs) limit self‐powered organic sensors. This work resolves this by developing a n‐type self‐assembled monolayer (SAM), “3‐PAPh”. This SAM forms a chemically stable and structurally ordered interface that fundamentally suppresses defect formation.
Ohhyun Kwon, Jae Hoon Son, Tae Hyuk Kim, Gyeong Min Lee, Seunghyun Oh, Gayoung Ham, Min Jong Lee, Sang Heon Lee, Seon Joong Kim, Hyojung Cha, Han Young Woo, Jae Won Shim   +11 more
wiley   +1 more source

Schottky barrier and contact resistance of InSb nanowire field effect transistors

, 2016
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental ...
Dick, Kimberly A, Fan, Dingxun, Ghalamestani, Sepideh Gorji, Kang, N, Xu, H Q   +4 more
core   +1 more source

Complex impedance of a spin injecting junction [PDF]

, 2002
Theory of the ac spin injection from a ferromagnetic electrode into a normal conductor through a tunnel or Schottky contact is developed. Diffusion and relaxation of non-equilibrium spins results in a frequency dependent complex impedance controlled by ...
Rashba, Emmanuel I.
core   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source