Results 81 to 90 of about 47,292 (298)
Advanced Functional Materials, EarlyView.Two isomorphic COFs were synthesized and compared, including an amphoteric COF (SQ‐TAPT) and a neutral COF (PDA‐TAPT). The ionic bonds in SQ‐TAPT introduce more Born effective charges, thereby enhancing its ionic displacement polarization. Experimental and theoretical calculations demonstrated that SQ‐TAPT exhibited higher polarity and stronger ...
Ge Yan +12 more
wiley +1 more source
A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications [PDF]
A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG).
Crowe, Thomas W. +3 more
core +1 more source
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
, 2011 The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/
Hamaya, K. +4 more
core +1 more source
Self‐Hybridized Exciton‐Polariton Photodetectors From Layered Metal‐Organic Chalcogenolates
Advanced Functional Materials, EarlyView.Self‐hybridized exciton‐polariton photodetectors are demonstrated using high refractive index mithrene, eliminating the need for top mirrors. This simplified architecture enables tunable sub‐bandgap photodetection via lower exciton‐polariton states and enhanced carrier transport through ultrafast polariton group velocities.
Bongjun Choi +3 more
wiley +1 more source
The Current Crowding Effect in ZnO Nanowires with a Metal Contact [PDF]
, 2015 Nanoscale electron tunneling and thermionic transport via the metal-semiconductor interface of ZnO nanowires is found to be strongly affected by the metal contact shape, the metal-semiconductor interface radius and the nanowire radius.
Karol Kalna, Richard Cobley
core +1 more source
Advanced Functional Materials, EarlyView.A reactive in situ solution complexation strategy reconstructs the surface of 2.0 eV ultra‐wide‐bandgap perovskites via proton transfer. This chemical modulation eliminates metallic defects and induces a degenerate‐like n‐type surface, establishing an Ohmic tunneling contact.
Saemon Yoon +11 more
wiley +1 more source
Quantitative analysis of the Schottky interface of reduced graphene oxide Schottky diodes
Materials Research Express, 2020 A Schottky contact is greatly vital for electronic devices; therefore, a quantitative analysis of the Schottky interface is important in realizing a high-performance Schottky diode.
Souad Aodah +3 more
doaj +1 more source
Importance of Schottky barriers for wide-bandgap thermoelectric devices
, 2018 The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an ...
Battiato, Marco +2 more
core +1 more source
A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure [PDF]
, 1992 The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels.
Asenov, A. +4 more
core +1 more source
Single‐ and Dual‐Atom Configurations in Atomically Dispersed Catalysts for Lithium–Sulfur Batteries
Advanced Functional Materials, EarlyView.Single‐atom and dual‐atom‐based atomically dispersed catalysts (ADCs) effectively address the shuttle effect and sluggish redox kinetics in Li–S batteries. With nearly 100% atomic utilization and tunable coordination environments, ADCs enhance LiPSs adsorption, lower conversion barriers, and accelerate sulfur redox reactions.
Haoyang Xu +4 more
wiley +1 more source