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Photosensitive barium titanate Schottky diodes
IEEE Transactions on Electron Devices, 1968The observation of photocurrents generated in Schottky barrier diodes on Remeika-grown reduced barium titanate is reported. Photon-to-electron conversion efficiencies of 5% at 0.3 μm have been measured which suggests that the effect may be large enough for employment in practical devices.
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Nano Research, 2014
The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low reverse leakage current of 1.0 × 10−8 A/cm2 at −5 V were observed.
Seongjun Kim +5 more
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The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low reverse leakage current of 1.0 × 10−8 A/cm2 at −5 V were observed.
Seongjun Kim +5 more
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Physica Status Solidi (a), 1991
Cette diode se comporte plus ou moins comme une structure MIS avec une couche d'oxyde naissante minimum. Les hauteurs de barriere, obtenues a partir de la caracteristique courant-tension et de la methode de photoreponse, sont a peu pres egales.
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Cette diode se comporte plus ou moins comme une structure MIS avec une couche d'oxyde naissante minimum. Les hauteurs de barriere, obtenues a partir de la caracteristique courant-tension et de la methode de photoreponse, sont a peu pres egales.
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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2003
This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.
P. Machac +3 more
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This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.
P. Machac +3 more
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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Metallic polythiophene/inorganic semiconductor Schottky diodes
Physica B: Condensed Matter, 1993Abstract An examination of the rectification properties of organic conductor/inorganic semiconductor/metal Schottky diodes has been made, in which freshly prepared polythiophene has been used as metal, and n-Si and n-GaAs as semiconductors. Polythiophene films were electrochemically obtained on glass substrates covered with Au in acetonitrile/0.25 M ...
KOLELI, F, TURUT, A
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Graphene/Si Schottky diodes [PDF]
, 2016 We etched a n-Si wafer to form arrays of Si-nanotips emerging from a SiO2 layer on which we transferred CVD grown monolayer graphene. We measured the electrical characteristics of the junction and found a rectifying behavior with On/Off ratio increasing with decreasing temperature and at room temperature higher than 1.5·102 at ±0.5V.
Luongo, Giuseppe +6 more
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Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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