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Design of the Synergistic Rectifying Interfaces in Mott–Schottky Catalysts
Chemical Reviews, 2023Xu Dong, Jie-Sheng Chen, Xin-Hao Li
exaly
1982
Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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1993
The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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Eine Schottky-Diode besteht aus einem Substrat aus Gallium-Arsenid (5), auf das epitaktisch eine monokristalline mit Silizium dotierte Gallium-Arsenid-Schicht (6) aufgebracht ist. Zur Bildung eines Schottky-Kontaktes wird auf diese Schicht epitaktisch eine monokristalline Erbium-Arsenid-Schicht oder Ytterbium-Arsenid-Schicht (7) aufgebracht.
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