Results 91 to 100 of about 2,116 (217)
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj
Journal of the Society for Information Display, Volume 33, Issue 4, Page 283-293, April 2025.We present a 6T1M2C pixel circuit for micro‐LED driving, which takes advantage of the properties of the multimodal thin‐film transistor (MMT) to achieve pulse width modulation (PWM) and pulse amplitude modulation (PAM) simultaneously, while also performing threshold voltage compensation. This numerical simulation‐based proof of concept demonstrates the
Eva Bestelink, Radu A. Sporea
wiley +1 more source
InfoScience, Volume 2, Issue 1, March 2025.A model of a metal halide perovskite (MHP)‐based electrically pumped vertical‐cavity surface‐emitting laser (EPVCSEL) has been developed, presenting a 3D thermal distribution of the device, the normalized light intensity profile, and the as‐modeled EPVCSEL characteristics.
Renjun Liu +8 more
wiley +1 more source
Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) [PDF]
Journal of Optoelectronical Nanostructures, 2019 We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional ...
Kazem Pourchitsaz +1 more
doaj
EPJ Web of Conferences, 2017 In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector.
Abd Rahim Alhan Farhanah +3 more
doaj +1 more source
High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]
Журнал нано- та електронної фізики, 2011 In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity +3 more
doaj
Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD Tools
IOSR Journal of Electrical and Electronics Engineering, 2013 In this paper, a 65nm scaled channel of PMOS is fabricated and studied its electrical characteristics. Athena module of SILVACO software was use. The two characteristics such as Id – Vg and Id – Vd reading Vth parameters for both characteristics for different process parameters like: gate oxide thickness, channel doping and channel implantation.
openaire +1 more source
Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor
Discover MaterialsIn this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper ...
N. Nithya +5 more
doaj +1 more source
Electrical characteristics analysis of a 314 mm2 double-sided spiral SDD for x-ray pulsar navigation
Materials Research Express, 2020 Pulsar navigation, to meet the physical needs of detecting pulsed x-ray contour, requires a large-area and high-energy resolution silicon drift detector (SDD).
Xinwang Zhang +3 more
doaj +1 more source
Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [PDF]
, 2012 In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature.
Akhtar, J. +3 more
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