Results 101 to 110 of about 2,116 (217)

Simulation and Optimization of Silicon Solar Cell Back Surface Field

Medžiagotyra, 2015
In this paper, TCAD Silvaco (Technology Computer Aided Design) software has been used to study the Back Surface Field (BSF) effect of a p+ silicon layer for a n+pp+ silicon solar cell.
Souad TOBBECHE, Mohamed Nadjib KATEB
doaj   +1 more source

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Engineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo   +6 more
doaj   +1 more source

Compact Model for Multiple Independent Gates Ambipolar Devices [PDF]

, 2013
The model presented is a charge-based model that assures the continuity of the current and the analytical derivability of charges to obtain the parasitic capacitances. It has been conceived to support the multiple independent gates, typical of nano-array
Frache, Stefano, Graziano, Mariagrazia, Piccinini, Gianluca   +2 more
core  

Numerical simulation and performance analysis of amorphous zinc oxynitride thin film transistor (a-ZnON TFT) for large area display applications

Results in Engineering
Recently, Amorphous zinc oxynitride (a-ZnON) has become a highly promising semiconductor material for applications requiring large-area electronic displays due to its excellent mobility, better stability under illumination stress etc.
Kadiyam Anusha, Arun Dev Dhar Dwivedi
doaj   +1 more source

Моделирование параметров гетероструктурного полевого транзистора в среде Silvaco TCAD

Доклады Томского государственного университета систем управления и радиоэлектроники, 2016
Silvaco TCAD system was studied. The model of GaAs pHEMT was obtained. IV curves and S-parameters of this device were received.
openaire   +1 more source

An effective modeling approach for high efficient solar cell using virtual wafer fabrication tools [PDF]

, 2011
In order to give a real understanding and realization of all the phenomena occurring inside the photovoltaic cell devices, the development of a reliable simulated model first is also essential.
Khomdram, Jolson Singh, Subir, K.S.
core  

Optimization and Performance Evaluation of ZnS-Based Schottky Diode Simulated in Silvaco TCAD

International Research Journal on Advanced Engineering Hub (IRJAEH)
This research shares the plan, testing, and improvement of ZnS Schottky diode using N-ZnS and P-Si materials. The Silvaco TCAD software was used for the testing. It's important to blend p-Si & n-ZnS carefully for Schottky diodes with top-notch performance. The V-I characteristics Schottky diodes were deeply analyzed to guarantee the best efficiency
null M. Sai kumar, null Dr. Anita Khanna, null Mrs. Pragati Patharia   +2 more
openaire   +1 more source

Design and Research on Terminal Structure of 8.5 kV UHV Thyristor With Low Proportion

机车电传动, 2021
As an important device for energy conversion and transmission, high-power thyristors are widely used in fields such as high-voltage direct current transmission.
Chen ZHANG, Dong LIU, Maosen TANG, Zeyu WU, Zongyao ZHOU, Xinglai GE   +5 more
doaj  

EFFECTS OF INTERNAL FIELDS IN QUANTUM DOTS [PDF]

, 2010
In this work we study the effect of built in electrostatic fields in Quantum Dots. Built-in electrostatic fields in Zincblende quantum dots originate mainly from--(1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (
Sundaresan, Sasi Sekaran
core   +1 more source

Initial study on performance enhancement of using FeS2 back surface field and antireflective layers in CZTS solar cells

Discover Applied Sciences
This investigation advances kesterite photovoltaic technology through optimized Cu₂ZnSnS₄ (CZTS) absorber design, capitalizing on its earth-abundant and eco-friendly characteristics.
Anis Akkari, Badriyah Alhalaili, Olfa Kamoun, Haikel Jelassi, Ruxandra Vidu, Najoua Turki-Kamoun   +5 more
doaj   +1 more source