Results 11 to 20 of about 2,116 (217)
Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD [PDF]
IOP Conference Series: Materials Science and Engineering, 2019 Abstract This paper proposes a numerical simulation approach to study the electrolyte pH change of ion-sensitive field effect transistor (ISFET) structures using Silvaco technology computer-aided design (TCAD) tools. This paper examines the ISFET device’s electrical response to electrolyte pH change.
Ahmed M. Dinar +5 more
openaire +3 more sources
Study of ISFET sensitivity to pH variations using Silvaco TCAD
TELKOMNIKA (Telecommunication Computing Electronics and Control)Nur Afiqah Hani Senin +5 more
exaly +4 more sources
Accelerating Flux Calculations Using Sparse Sampling
Micromachines, 2018 The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the corresponding fabrication processes. Computer simulations offer a cost- and time-saving possibility
Lukas Gnam +4 more
doaj +1 more source
An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]
, 2018 Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo +3 more
core +1 more source
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
, 2017 TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
Silvaco TCAD Implementation of GaAs/GaSb Quantum Dot Solar Cell
, 2023 In this work a GaAs/GaSb-based p-i-n quantum dot solar cell (QDSC) has been implemented in Silvaco TACD environment. The addition of GaSb Quantum dots (QD) in the GaAs intrinsic layer extends the absorption capability, for which photons with higher wavelengths can be absorbed to photo-generate more carriers resulting in the increase of the conversion ...
S.M. Shafkat Nawaz +2 more
openaire +1 more source
The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions [PDF]
Технологія та конструювання в електронній апаратурі, 2012 A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package.
A. B. Gnilenko +3 more
doaj +1 more source
Improved Perovskite Solar Cell Performance Using Semitransparent CNT Layer [PDF]
Journal of Optoelectronical Nanostructures, 2023 In this paper, the effect of using semi-transparent Carbonnanotube layer (CNT) on the efficiency of perovskitesolar cell (PSC) is investigated. One of the mostimportant process in PCS is charge collecting. In thisregard, Carbon nanotubes have the ability
Mansureh Roohollahi +2 more
doaj +1 more source
Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs
Scientific Reports, 2021 A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS.
Seong-Joo Han +8 more
doaj +1 more source
GaN-Based GAA Vertical CMOS Inverter
IEEE Journal of the Electron Devices Society, 2022 In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the
Xinke Liu +7 more
doaj +1 more source