Determination of the Sensitive Volume and Critical Charge for Induction of SEU in Nanometer SRAMs [PDF]
فصلنامه علوم و فناوری فضایی, 2023 In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations.
Gholamreza Raisali +2 more
doaj +1 more source
Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades [PDF]
, 2012 The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature
Bagolini, A. +9 more
core +2 more sources
C3TM: CEI CCD charge transfer model for radiation damage analysis and testing [PDF]
, 2018 Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data.
Burgon, Ross +4 more
core +1 more source
Optimization of 3D shell electrode detectors—A type of honeycomb shell electrode detector
AIP Advances, 2018 In order to reduce dead zone of Closed Shell-Electrode Silicon Detector (CSESD), this paper introduces an optimal scheme of 3D shell electrode type detector– a novel type of Honeycomb Shell Electrode Detector– HSED (Chinese patent #zl 201710 676008.3 ...
Ya Zhang +4 more
doaj +1 more source
A Simulation Study of Single Event Burnout (SEB) in a High-Voltage Pin Diode [PDF]
فصلنامه علوم و فناوری فضاییExposure to ionizing radiation in space can potentially destroy electronic devices due to single-event effects (SEEs). Developing modern space technology requires high-voltage devices to supply the increased electric power demand.
Masume Soleimaninia
doaj +1 more source
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
Micromachines, 2023 In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
doaj +1 more source
Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns [PDF]
, 2010 A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar
Adachi +8 more
core +2 more sources
SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
Вестник Северо-Кавказского федерального университета, 2022 The program Silvaco TCAD simulated electrical parameters of solar cells based on AlxGa1-xAs - InxGa1-xAs - GaAs under AM 1.5 for different values of x.
Oleg V. Devitsky, Igor A. Sysoev
doaj
Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier [PDF]
EPJ Web of ConferencesThe article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset.
Tok Çağrı +5 more
doaj +1 more source
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
doaj +1 more source