Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects [PDF]
, 2009 International audienceIn this paper we present a compact model of Double-Gate MOSFET architecture including ballistic and quasi-ballistic transport down to 20 nm channel length.
Autran, Jean-Luc +3 more
core +3 more sources
Extending the bounds of performance in E-mode p-channel GaN MOSHFETs [PDF]
, 2016 An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |Vth| requires a reduction of the thickness of oxide and the GaN channel layer.
De Souza, M.M., Kumar, A.
core +1 more source
Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
Micromachines, 2022 We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction.
Yi Fang, Ling Chen, Yuqi Liu, Hong Wang
doaj +1 more source
Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium-Doped MoO<sub>X</sub> as Hole Transport Layers. [PDF]
Adv Sci (Weinh)This work reveals that the migration and accumulation of oxygen vacancies lead to surface charge inversion in MoOX, which degrades device performance. Vanadium doping effectively increases the vacancy migration barrier, enhances material stability, elevates the work function, and broadens the bandgap.
Cai H +8 more
europepmc +2 more sources
Simulation of radiation-induced defects
, 2015 Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics ...
Peltola, Timo
core +1 more source
Investigation of light trapping mechanism of Silicon solar cell performance utilizing Silvaco TCAD
Journal of Physics: Conference Series, 2020 Abstract In this project, an investigation on the effect of difference shapes of the top surface silicon (Si) solar cell as an antireflective (AR) layer was carried out. Texturing the top surface of silicon solar cell helps to reduce light reflection from the solar cell. The different surface texturing which is planar structure, columnar
A F Abd Rahim +6 more
openaire +1 more source
Research possibilities of Silvaco TCAD for physical simulation of gallium nitride power transistor [PDF]
AIP Conference Proceedings, 2016 The article introduces the benefits and application features of Silvaco TCAD tools. The possibility of using Device Simulation Framework – ATLAS for GaN power transistor modeling demonstrated. The band diagram of the AlGaN/GaN heterostructure of power transistor built, taking into consideration the polarization processes and surface traps as a source ...
Olga Demchenko +2 more
openaire +1 more source
, 2014 The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N. +3 more
core +3 more sources
From the organic thin film transistor to the 3-D textile organic cylindrical transistors - perspectives, expectations and predictions [PDF]
, 2017 In this paper we examine the possibility to simulate and study the behaviour of a fiber-based Textile Transistor in a commercial TCAD system. We also examine the capability of such transistors to operate in sufficiently low voltages, aiming to the ...
Louris, E. +4 more
core +2 more sources
Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer
Results in Physics, 2021 A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device ...
Fan Xia +7 more
doaj +1 more source