Results 61 to 70 of about 2,116 (217)

Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications [PDF]

, 2016
The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied.
Chatterjee, Neel, Pandey, Sujata
core   +1 more source

Transition from Metal‐Oxide‐Semiconductor to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.
We present an analytical description of MOS electrostatics revealing a saturation of the inversion‐layerthickness and electric field, accompanied by the formation of an Esaki‐type tunneling barrier. A fullquantum‐mechanical calculation shows that band‐to‐band tunneling becomes significant above threshold, triggering charge injection into the interface ...
Pedro Pereyra
wiley   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas

Mokslas: Lietuvos Ateitis, 2011
Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj  

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs [PDF]

, 2011
A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure.
Andersson, Kristoffer, Angelov, Iltcho, Hirano, Yoshihito, Inoue, Akira, Oishi, Toshiyuki, Otsuka, Hiroshi, Thorsell, Mattias, Yamanaka, Koji   +7 more
core   +1 more source

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source

A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Journal of Electrical and Computer Engineering, 2022
In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels.
Zening Mo, Zhidi Jiang, Jianping Hu
doaj   +1 more source

Electron Multiplying Low-Voltage CCD With Increased Gain [PDF]

, 2018
Novel designs for the gain elements in electron multiplying (EM) CCDs have been implemented in a device manufactured in a low voltage CMOS process.
Dunford, Alice, Holland, Andrew D., Stefanov, Konstantin D.   +2 more
core   +1 more source

Pinch‐Off Mechanism of High‐Gain Organic Transistors with Field Plates: Statistical Analysis, Device Simulations and Compact Modeling

Advanced Electronic Materials, Volume 12, Issue 4, 18 February 2026.
Statistical analysis of over 3000 devices reveals a novel operating mechanism in printed organic thin‐film transistors featuring a grounded field plate beneath the source. The field plate governs the low and tunable pinch‐off, enabling excellent current saturation and ultra‐high gain.
Kazuki Ono, Ryota Kobayashi, Eva Bestelink, Radu A. Sporea, Satoru Inoue, Yudai Hemmi, Yuji Ikeda, Tatsuo Hasegawa, Hiroyuki Matsui   +8 more
wiley   +1 more source