Results 71 to 80 of about 2,116 (217)

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

open access: yes, 2013
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost ...
Bagolini, A.   +9 more
core   +1 more source

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology [PDF]

open access: yes, 2018
This letter presents first–ever fabricated GaN split-current magnetic sensor device. This is the key technology needed to fully unlock the potential of GaN power technology. Device operation and key manufacturing steps are also presented.
Petar Igic
core   +1 more source

Radiation‐Induced Degradation and Charge‐Collection Stability in 4H‐SiC p–i–n Betavoltaic Cells

open access: yesInternational Journal of Energy Research, Volume 2026, Issue 1, 2026.
4H‐silicon carbide (SiC)–based betavoltaic (BV) cells have gained attention as self‐powered energy sources for long‐term stable operation in space and extreme environments. In this study, a 4H‐SiC p–i–n BV cell was fabricated, and the degradation mechanisms of its electrical characteristics under proton irradiation were investigated.
Kyung Hee Kim   +5 more
wiley   +1 more source

Tuning the Air Stability of N‐Type Semiconductors via Poly(2‐vinylpyridine): The Importance of Humidity and Molecular Weight

open access: yesSmall Science, Volume 5, Issue 12, December 2025.
Blending the n‐type polymer P(NDI2OD‐T2) with hygroscopic poly(2‐vinylpyridine) (P2VP) improves device stability by limiting oxygen diffusion. Higher molecular weight P2VP forms larger domains that absorb moisture, reduce free volume for oxygen, and partition oxygen away from semiconductor crystallites.
Laura E. Dickson   +6 more
wiley   +1 more source

Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool [PDF]

open access: yes, 2017
We used a commercial TCAD tool in order to simulate a cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes in its electrical characteristics. The simulation was based on models and parameters
Louris, E.   +4 more
core   +1 more source

Performance Analysis of a Dual‐Drain Dual‐Gate Schottky Tunnel Field Effect Transistor Biosensor for Non‐Ideal Hybridization

open access: yesNano Select, Volume 6, Issue 11, November 2025.
In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve ground breaking sensitivity. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well ...
Anusuya Periyasami, Prashanth Kumar
wiley   +1 more source

Graphene as transparent and current spreading electrode in silicon solar cell

open access: yesAIP Advances, 2014
Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation.
Sanjay K. Behura   +3 more
doaj   +1 more source

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes [PDF]

open access: yes, 2017
Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K.
Al Saqri, Noor alhuda   +8 more
core   +2 more sources

Swarm‐Optimized ZnO/CdS/CIGS/GaAs Solar Cell for Enhanced Efficiency and Thermal Resilience

open access: yesAdvanced Energy and Sustainability Research, Volume 6, Issue 10, October 2025.
This article addresses the problem of optimizing the efficiency and thermal resilience of ZnO/CdS/CIGS solar cells, which are promising but still face challenges in maximizing performance under high‐temperature conditions and concentrated sunlight. The main issue is enhancing the efficiency of these cells while also ensuring that they can withstand the
Habib Ullah Manzoor   +4 more
wiley   +1 more source

Дослідження впливу графенових контактів на ефективність фотоелектричного перетворення в багатоперехідному сонячному елементі з вертикальними p–n переходами

open access: yesNauka ta progres transportu
Мета. Це дослідження спрямовано на вдосконалення конструкції багатоперехідного сонячного елемента з вертикально розташованими p–n переходами для підвищення ефективності фотоелектричного перетворення в разі похилого падіння сонячних променів.
A. B. Gnilenko, S. V. Plaksin
doaj   +1 more source

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