Results 81 to 90 of about 2,116 (217)

Alleviating trade‐off between responsivity and response speed of Ga2O3 solar‐blind photodetector via modulation of carrier redistribution and extraction accessibility

InfoMat, Volume 7, Issue 9, September 2025.
Ga2O3 photodetectors, particularly those dominated by the photoconductive effect, inevitably face a trade‐off between photoresponsivity and response speed. In this work, bilayer‐structure Ga2O3 films are adopted for solar‐blind photodetectors to alleviate the trade‐off between photoresponsivity and response speed.
Xiaolan Ma, Ying Zhang, Pengju Tan, Xiao Feng, Yiran Hao, Guangwei Xu, Xiaolong Zhao, Nan Gao, Xiaohu Hou, Qin Hu, Shibing Long   +10 more
wiley   +1 more source

Nanodarinių formavimosi procesų tyrimas Research of Self-Formation Nanostructures

Mokslas: Lietuvos Ateitis, 2011
<p>Tiriami šoninio ėsdinimo procesai nanodarinių formavimosi geometrijai modeliuoti Silvaco TCAD programinio paketo ATHENA programa. Modeliuojamas nanodarinių formavimasis esant skirtingoms kaukės selektyvumo vertėms, lygioms 2, 10, 40 ir 100 ...
Romas Petrauskas
doaj  

Modeling of GaInP/GaAs dual junction solar cells including tunnel junction [PDF]

, 2008
This paper presents research efforts conducted at the IES-UPM in the development of an accurate, physically-based solar cell model using the generalpurpose ATLASR device simulator by Silvaco.
Algora del Valle, Carlos, Baudrit, Mathieu   +1 more
core   +1 more source

In‐Depth Review of Multiphysics and Circuit Simulation Approaches for Perovskite Solar Cells

Solar RRL, Volume 9, Issue 18, September 2025.
GA: This review summarizes simulation approaches for perovskite solar cells, categorizing them into multiphysics and circuit models. It covers optical and charge‐transport modeling techniques, equivalent circuits with and without ion migration, and highlights future directions for predictive, integrated simulations to accelerate PSC design and ...
Yuan Lv, Zhida Wang, Cheng Qiu, Yue Hu
wiley   +1 more source

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

Analysis of GaN HEMTs Switching Transients Using Compact Model [PDF]

, 2017
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed.
Faramehr, Soroush, Igic, Petar
core   +1 more source

T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

Micromachines, 2020
In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections.
Zeqi Chen, Jianping Hu, Hao Ye, Zhufei Chu   +3 more
doaj   +1 more source

O-MOORE-NICE!: new methodologies and algorithms for design and simulation of analog integrated circuits [PDF]

, 2010
No ...
Benner, P, De Tommasi, L, Dhaene, Tom, Harutyunyan, D, Rommes, J, Schilders, W, Sevat, M, Striebel, M, ter Maten, J   +8 more
core   +1 more source

Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems

Advanced Materials Interfaces, Volume 12, Issue 11, June 9, 2025.
The GaN‐based multichannel heterostructures with larger band conduction difference own better temperature stability. And lattice‐matched heterostructures can improve the temperature stability of the 2D electron gas in the bottom channel. Abstract In this study, 2 electron gas(2DEG) behaviors in Al0.28Ga0.72N/GaN multichannel heterostructures with doped
Wentao Zhang, Ang Li, Chong Wang, Kai Liu, Kuo Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +7 more
wiley   +1 more source

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability

Advanced Electronic Materials, Volume 11, Issue 8, June 2025.
Coplanar DG a‐IGZTO/a‐IZO multi‐channel TFT is proposed for the first time to achieve large drain current, high mobility, and low off‐state current for large‐area AMOLED displays. TCAD simulation verifies the presence of 2D electron gas at hetero‐interface and multi‐channel conduction under dual‐sweep driving.
Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang   +15 more
wiley   +1 more source