Results 161 to 170 of about 534 (215)

Single-Event Transient in FinFETs and Nanosheet FETs

IEEE Electron Device Letters, 2018
A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device shows superior immunity to alpha particles due to the strong gate controllability.
Jungsik Kim, M Meyyappan, Jin-Woo Han
exaly   +3 more sources

Single event transients in combinatorial circuits

Proceedings of the 18th annual symposium on Integrated circuits and system design - SBCCI '05, 2005
The single event upset (SEU) mechanism in MOS circuits is normally investigated by Spice-like circuit simulation. The problem is that electrical simulation is time consuming and must be performed for each different circuit topology, incident particle and track. This work presents an accurate and computer efficient analytical model for the evaluation of
Gilson I. Wirth, Michele G. Vieira, Egas Henes Neto, Fernanda Gusmão de Lima Kastensmidt   +3 more
openaire   +1 more source

Efficient analysis of single event transients

Journal of Systems Architecture, 2004
The effects of charged particles striking VLSI circuits and producing single event transients (SETs) are becoming an issue for designers who exploit deep sub-micron technologies; efficient and accurate techniques for assessing their impact on VLSI designs are thus needed.
SONZA REORDA, Matteo, VIOLANTE, MASSIMO
openaire   +2 more sources

Single event transients in dynamic logic

Proceedings of the 19th annual symposium on Integrated circuits and systems design, 2006
Radiation effects, like Single Event Transients (SET), are increasingly affecting integrated circuits as device dimensions are scaling down. With decreasing dimensions and supply voltages, the charge used to store information decreases, turning the circuits more sensitive to the transient currents generated by energetic particle hits.
Gilson I. Wirth, Ivandro Ribeiro, Michele G. Vieira, Fernanda Gusmão de Lima Kastensmidt   +3 more
openaire   +1 more source

Single event transient effects in a voltage reference

Microelectronics Reliability, 2005
Abstract The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations.
P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion   +6 more
openaire   +1 more source

A model for single-event transients in comparators

IEEE Transactions on Nuclear Science, 2000
A two-step modeling approach is developed for single-event transients in linear circuits that uses the PISCES device simulation program to calculate transient currents in key internal transistor structures. Those currents are then applied at the circuit level using the SPICE circuit analysis program.
A.H. Johnston, G.M. Swift, T.F. Miyahira, L.D. Edmonds   +3 more
openaire   +1 more source

A compendium of single event transient data

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588), 2002
We present a compendium on observed Single Event Transients on analog and digital circuits. Both the data and the test methods used are presented.
M.W. Savage, T. Turflinger, J.W. Howard, S. Buchner   +3 more
openaire   +1 more source

Single event transients in operational amplifiers

IEEE Radiation Effects Data Workshop, 2005., 2005
A number of bipolar operational amplifiers have been evaluated for single event effects for possible use in a space application. Various trigger thresholds were used to estimate the distribution of transient amplitudes.
J. George, R. Koga, S. Crain, P. Yu, S. Nguyen, E. Normandy, D. Kachuche, B.K. Steffan   +7 more
openaire   +1 more source

Single-Event Transients in Voltage Regulators

IEEE Transactions on Nuclear Science, 2006
Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be ...
Johnston, A. H., Miyahira, T. F., Irom, F., Laird, J. S.   +3 more
openaire   +2 more sources

Systematic analyses for latching probability of single-event transients

Fifteenth International Symposium on Quality Electronic Design, 2014
Soft errors caused by particle strikes are expected to increase as technology scales down. This is partially because more single-event transients (SET) are latched by memory elements at the primary output of combinational circuits. To speed up the assessment of SET-induced soft errors, we propose a systematic analysis method to examine the probability ...
Hoda Pahlevanzadeh, Qiaoyan Yu
openaire   +1 more source