Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset [PDF]
MicromachinesPlanar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses
Hongwei Zhang +6 more
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Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell [PDF]
Micromachines, 2023 In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a
Naheem Olakunle Adesina
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Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments [PDF]
MicromachinesAs semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
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SEU Hardened D Flip-Flop Design with Low Area Overhead [PDF]
Micromachines, 2023 D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the ...
Chenyu Yin +3 more
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Enhancing the Reliability of AD936x-Based SDRs for Aerospace Applications via Active Register Scrubbing and Autonomous Fault Recovery [PDF]
SensorsSingle Event Upsets (SEUs) in Commercial Off-The-Shelf (COTS) Software-Defined Radios (SDRs) are frequent in a erospace applications, especially in GEO (Geostationary Orbit) orbit during severe solar activity, and can lead to unexpected register ...
Jinyang Wang, Zhugang Wang, Li Zhou
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A Lightweight Method for Detecting and Correcting Errors in Low-Frequency Measurements for In-Orbit Demonstrators [PDF]
SensorsIn the pursuit of enhancing the technological maturity of innovative magnetic sensing techniques, opportunities presented by in-orbit platforms (IOD/IOV experiments) provide a means to evaluate their in-flight capabilities.
María-Ángeles Cifredo-Chacón +2 more
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Low power and high-speed quadrate node upset tolerant latch design using CNTFET [PDF]
Scientific ReportsScalability, leakage, short-channel effects, and reliability problems are some of the difficulties facing the semiconductor industry as it continues to experience a reduction in size.
Shaik Asiya, Satheesh Kumar S
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Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature [PDF]
Sensors, 2018 This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola +9 more
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SEU-Hardened High-Speed SRAM Design with Self-Refresh and Adjacent-Bit Error Correction [PDF]
MicromachinesThis paper proposes a high-speed static random access memory (SRAM) architecture that integrates a self-refresh mechanism with a novel single error and adjacent-bit errors correction (SEABEC) scheme to enhance resilience against single-event upsets (SEUs)
Tianwen Li, Jianbing Tian, Jingli Qi
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Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]
, 2006 The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P. +13 more
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