Results 211 to 220 of about 13,102,541 (237)

Research on single event upset cross-section of DICE SRAM

2017 Prognostics and System Health Management Conference (PHM-Harbin), 2017
In radiation hardened SRAMs and flip-flops, DICE (Dual Interlocked Cell) design is commonly used. DICE is supposed not to flip under normally incident heavy ion beams. But tests show a non-zero SEU cross-section of SICE SRAM. The paper presents a quantitative analysis of the phenomenon.
Zhu Ming, Zhu HengJing, Hang He, Gu Hantian, Zhang Wei, Yu Qingkui, Sun Yi, Tang Min   +7 more
openaire   +1 more source

Laser cross section measurement for the evaluation of single-event effects in integrated circuits

Microelectronics Reliability, 2000
Abstract The cross section of ICs extracted from particles accelerator testing is extended to the pulsed laser testing. The extraction methodology attached to this new parameter is presented. It provides a new tool for integrated circuits reliability quantification, illustrated in the case of SEU sensitivity evaluation of a single SRAM cell.
Pouget, Vincent, Fouillat, Pascal, Lewis, Dean, Lapuyade, Hervé, Darracq, Frédéric, Touboul, Andre   +5 more
openaire   +2 more sources

Measurement of the single event upset cross-section in the SVX IIe chip

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
Abstract The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the DO Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded.
A. Juste, S.M. Tripathi, D.A. Wijngaarden   +2 more
openaire   +1 more source

Predictions of Proton Cross-Section and Sensitive Thickness for Analog Single-Event Transients

IEEE Transactions on Nuclear Science, 2016
In linear devices, the strong impact of configuration on the SET characterization makes them very difficult to predict without using particle accelerators for each application. In this work, based on heavy ion data, we propose to simulate proton cross-sections using gateway tools such as SIMPA, PROFIT or the more recent METIS software we developed ...
Cecile Weulersse, Sebastien Morand, Florent Miller, Thierry Carriere, Renaud Mangeret   +4 more
openaire   +1 more source

Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells

IEEE Transactions on Nuclear Science, 2015
We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The method is based on experimental analysis of SEU maps in sub-100 nm 6T SRAM along with layout considerations and SPICE simulations.
Maxim S. Gorbunov, Anna B. Boruzdina, Pavel S. Dolotov   +2 more
openaire   +1 more source

Monte Carlo calculation of the cross-section of single event upset induced by 14MeV neutrons

Radiation Measurements, 2005
Abstract High-density static random access memory may experience single event upsets (SEU) in neutron environments. We present a new method to calculate the SEU cross-section. Our method is based on explicit generation and transport of the secondary reaction products and detailed accounting for energy loss by ionization.
H. Li, J.Y. Deng, D.M. Chang
openaire   +1 more source

Direct measurement of an energy-dependent single-event-upset cross-section with time-of-flight method at CSNS

Chinese Physics B, 2023
To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset (SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source.
Biao Pei, Zhixin Tan, Yongning He, Xiaolong Zhao, Ruirui Fan   +4 more
openaire   +1 more source

Further development of the Heavy Ion Cross section for single event UPset: model (HICUP)

IEEE Transactions on Nuclear Science, 1995
HICUP models the angular dependent heavy ion upset cross section. It pulls together many of the parameters and concepts used to characterize the Single Event Upset (SEU) phenomena, unifying them in a single cohesive model. HICUP is based on a Rectangular Parallelepiped (RPP) geometry for the sensitive volume and the Weibull density function for the ...
L.W. Connell, F.W. Sexton, A.K. Prinja
openaire   +1 more source

Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections

IEEE Transactions on Nuclear Science, 2010
SEU simulation analyses of a commercial 45 nm CMOS SOI SRAM cell compared to test data highlight the need to better understand and account for variation in inter-cell hardness, and uncertainty in energy deposition in small sensitive volumes. Simulations indicate that operating voltage and body resistance have the largest impact on simulated cell ...
Thomas Daniel Loveless, Michael L. Alles, Dennis R. Ball, Kevin M. Warren, Lloyd W. Massengill   +4 more
openaire   +1 more source

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

IEEE Transactions on Nuclear Science, 1996
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.
G.H. Johnson, K.F. Galloway, R.D. Schrimpf, J.L. Titus, C.F. Wheatley, M. Allenspach, C. Dachs   +6 more
openaire   +1 more source