Results 221 to 230 of about 211,032 (253)

Research on single event upset cross-section of DICE SRAM

2017 Prognostics and System Health Management Conference (PHM-Harbin), 2017
In radiation hardened SRAMs and flip-flops, DICE (Dual Interlocked Cell) design is commonly used. DICE is supposed not to flip under normally incident heavy ion beams. But tests show a non-zero SEU cross-section of SICE SRAM. The paper presents a quantitative analysis of the phenomenon.
Zhu Ming, Zhu HengJing, Hang He, Gu Hantian, Zhang Wei, Yu Qingkui, Sun Yi, Tang Min   +7 more
openaire   +1 more source

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

IEEE Transactions on Nuclear Science, 2013
Heavy-ion experimental results from flip-flops in 180-nm to 28-nm bulk technologies are used to quantify single-event upset trends. The results show that as technologies scale, D flip-flop single-event upset cross sections decrease while redundant storage node flip-flops cross sections may stay the same or increase depending on the layout spacing of ...
N J Gaspard, Z J Diggins, K Lilja
exaly   +2 more sources

Measurement of the single event upset cross-section in the SVX IIe chip

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
Abstract The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the DO Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded.
A. Juste, S.M. Tripathi, D.A. Wijngaarden   +2 more
openaire   +1 more source

Single-Event Upset Cross-Section Trends for D-FFs at the 5- and 7-nm Bulk FinFET Technology Nodes

IEEE Transactions on Nuclear Science, 2023
Yoni Xiong, Nicholas J Pieper, Alexandra T Feeley   +2 more
exaly   +2 more sources

Predictions of Proton Cross-Section and Sensitive Thickness for Analog Single-Event Transients

IEEE Transactions on Nuclear Science, 2016
In linear devices, the strong impact of configuration on the SET characterization makes them very difficult to predict without using particle accelerators for each application. In this work, based on heavy ion data, we propose to simulate proton cross-sections using gateway tools such as SIMPA, PROFIT or the more recent METIS software we developed ...
Cecile Weulersse, Sebastien Morand, Florent Miller, Thierry Carriere, Renaud Mangeret   +4 more
openaire   +1 more source

First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections

IEEE Transactions on Nuclear Science, 1987
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities.
Dennis L. Oberg, Jerry L. Wert
exaly   +2 more sources

Laser cross section measurement for the evaluation of single-event effects in integrated circuits

Microelectronics Reliability, 2000
Abstract The cross section of ICs extracted from particles accelerator testing is extended to the pulsed laser testing. The extraction methodology attached to this new parameter is presented. It provides a new tool for integrated circuits reliability quantification, illustrated in the case of SEU sensitivity evaluation of a single SRAM cell.
V. Pouget, P. Fouillat, D. Lewis, H. Lapuyade, F. Darracq, A. Touboul   +5 more
openaire   +1 more source

Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells

IEEE Transactions on Nuclear Science, 2015
We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The method is based on experimental analysis of SEU maps in sub-100 nm 6T SRAM along with layout considerations and SPICE simulations.
Maxim S. Gorbunov, Anna B. Boruzdina, Pavel S. Dolotov   +2 more
openaire   +1 more source

Further development of the Heavy Ion Cross section for single event UPset: model (HICUP)

IEEE Transactions on Nuclear Science, 1995
HICUP models the angular dependent heavy ion upset cross section. It pulls together many of the parameters and concepts used to characterize the Single Event Upset (SEU) phenomena, unifying them in a single cohesive model. HICUP is based on a Rectangular Parallelepiped (RPP) geometry for the sensitive volume and the Weibull density function for the ...
L.W. Connell, F.W. Sexton, A.K. Prinja
openaire   +1 more source

Angled flip-flop single-event cross sections for submicron bulk CMOS technologies

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013
Experimental angled heavy-ion single-event cross sections for hardened and unhardened flip-flops for technology nodes ranging from 28-nm to 130-nm are compared. Results show that hardened flip-flop cross sections increase at a faster rate with increasing angle of incidence than unhardened designs as technology scales.
K Lilja, M Bounasser, W T Holman
exaly   +2 more sources