Results 221 to 230 of about 13,102,541 (237)
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Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits
IEEE Transactions on Nuclear Science, 2005We present results from SEU testing of two limiter-amplifier ASICs. The circuits are electrically identical except that they are fabricated using different generations InP-based HBT technology. Cross sections measured at clock speeds of 6.4 and 12.8 GHz show technology dependence, and are analyzed to determine charge collection dynamics.
D.L. Hansen, P. Chu, S.F. Meyer
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IEEE Transactions on Nuclear Science, 1989
The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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IEEE Transactions on Nuclear ScienceInternational audienceThe single-event latch-up (SEL) cross section of a 16nm bulk finFET programmable system-on-chip (SoC) is investigated by combining single photon absorption (SPA) laser testing, emission microscopy and embedded instrumentation.
Vincent Pouget +2 more
exaly +2 more sources
2019 IEEE International Reliability Physics Symposium (IRPS), 2019
An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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High LET Single Event Upset Cross Sections For Bulk and SOI CMOS SRAMs
AIP Conference Proceedings, 2003Electronics in spacecraft and satellites are exposed to high‐energy cosmic radiation. In addition, terrestrial radiation can also affect earth‐based electronics. To study the effects of radiation upon integrated circuits and to insure the reliability of electronic devices, cosmic and terrestrial radiations are simulated with ion beams from particle ...
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Radiation Measurements, 2015
Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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Single Event Upset Prediction from Heavy Ions Cross Sections with No Parameters
2014We show how experimental SEU cross section can be used to characterize a device. We extract parameters that can be used for SEU cross section calculation for any other kind of particle.
Wrobel, Frédéric +4 more
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IEEE Transactions on Nuclear Science, 1996
Whereas HIC-UP modeled the heavy ion strike as a line source of charge, HIC-UP-TS accounts for the spatial distribution of electron-hole-pairs by using a 1/r/sup 2/ profile. The model compares well with experimental data.
L.W. Connell +3 more
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Whereas HIC-UP modeled the heavy ion strike as a line source of charge, HIC-UP-TS accounts for the spatial distribution of electron-hole-pairs by using a 1/r/sup 2/ profile. The model compares well with experimental data.
L.W. Connell +3 more
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Cross-Examination May Be More Detrimental to Repeated-Event Children Than Single-Event Children
Memory, 2022Daniel M Bernstein, Patricia I Coburn
exaly
Single Event Transient Study on PMOS-NMOS Cross-Coupled LC-VCO Using PLL
International Journal of Electronics, 2021S Radha
exaly