Results 231 to 240 of about 211,032 (253)
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Chinese Physics B, 2023
To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset (SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source.
Biao Pei +4 more
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To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset (SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source.
Biao Pei +4 more
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Monte Carlo calculation of the cross-section of single event upset induced by 14MeV neutrons
Radiation Measurements, 2005Abstract High-density static random access memory may experience single event upsets (SEU) in neutron environments. We present a new method to calculate the SEU cross-section. Our method is based on explicit generation and transport of the secondary reaction products and detailed accounting for energy loss by ionization.
H. Li, J.Y. Deng, D.M. Chang
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Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations
IEEE Transactions on Nuclear Science, 1999Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra.
M B Chadwick, E Normand
exaly +2 more sources
Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections
IEEE Transactions on Nuclear Science, 2010SEU simulation analyses of a commercial 45 nm CMOS SOI SRAM cell compared to test data highlight the need to better understand and account for variation in inter-cell hardness, and uncertainty in energy deposition in small sensitive volumes. Simulations indicate that operating voltage and body resistance have the largest impact on simulated cell ...
Thomas Daniel Loveless +4 more
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A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
IEEE Transactions on Nuclear Science, 1996The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.
G.H. Johnson +6 more
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IEEE Transactions on Nuclear Science, 1989
The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits
IEEE Transactions on Nuclear Science, 2005We present results from SEU testing of two limiter-amplifier ASICs. The circuits are electrically identical except that they are fabricated using different generations InP-based HBT technology. Cross sections measured at clock speeds of 6.4 and 12.8 GHz show technology dependence, and are analyzed to determine charge collection dynamics.
D.L. Hansen, P. Chu, S.F. Meyer
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2019 IEEE International Reliability Physics Symposium (IRPS), 2019
An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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Radiation Measurements, 2015
Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2016
Single-event cross sections of four inverter chains, with uniform inverter spacing ranging from 120 nm to 4 μm, were experimentally measured and compared. These inverter chains were irradiated using a focused ion beam. Waveforms of responses were sensed using on-chip wide-bandwidth analog multiplexers.
Mladen Mitrovic +7 more
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Single-event cross sections of four inverter chains, with uniform inverter spacing ranging from 120 nm to 4 μm, were experimentally measured and compared. These inverter chains were irradiated using a focused ion beam. Waveforms of responses were sensed using on-chip wide-bandwidth analog multiplexers.
Mladen Mitrovic +7 more
openaire +1 more source