Results 171 to 180 of about 214 (203)

Development of Radiation Hardened By Design (RHBD) of NAND gate to mitigate the effects of single event transients (SET)

2016 IEEE 1st International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES), 2016
Integrated circuits (ICs) operated in harsh environment that consist of various energetic particles is a threat for electronic equipments can provoke temporary errors or soft errors and various undesired effects. This paper presents a Radiation Hardened By Design (RHBD) of NAND gate using dynamic logic at 0.18µm technology is developed with the help of
Praveen Rathore, Sangeeta Nakhate
openaire   +1 more source

Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators

IEEE Transactions on Nuclear Science, 2002
We have measured the single-event transient (SET) response for a number of 139-type comparators with differing topologies. In this paper, we present the results from pulsed laser measurements on a number of different 139-type devices, as well as heavy ion measurements on a new RM139 device from NSC.
S.D. LaLumondiere, R. Koga, P. Yu, M.C. Maher, S.C. Moss   +4 more
openaire   +1 more source

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

2017 IEEE Radiation Effects Data Workshop (REDW), 2017
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot
Amanda N. Bozovich, Farokh Irom
openaire   +1 more source

Single-Event Transient (SET) sensitivity into the Clock Networks of FPGAs

2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2021
N. Guibbaud, F. Miller, T. Colladant
openaire   +1 more source

Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects

Microelectronics Reliability, 2023
Paula R.P. Allegro, Dennis L. Toufen, Vitor A.P. Aguiar, Lucas S.A. dos Santos, William N. de Oliveira, Nemitala Added, Nilberto H. Medina, Eduardo L.A. Macchione, Saulo G. Alberton, Marcilei A. Guazzelli, Marco A.A. Melo, Juliano A. Oliveira   +11 more
openaire   +1 more source

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
Zhiheng Wang, Ma Xiaohua, Lv Ling
exaly  

Comparative Analysis of Single Event Transients in InGaAs-OI/Bulk/BOI FinFETs for SET-Tolerant InGaAs/Ge-OI Complementary FinFET Circuits

IETE Journal of Research, 2023
Y. M. Aneesh, B. Bindu
openaire   +1 more source

An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

Journal of Electronic Testing
Baojun Liu 0001, Li Cai, Chuang Li
openaire   +1 more source

Single-Event Transient Case Study for System-Level Radiation Effects Analysis

IEEE Transactions on Nuclear Science, 2021
Rebekah A Austin, Jonathan Pellish, Hak Kim   +2 more
exaly  

Cost-effective SET-tolerant clock distribution network design by mitigating single event transient propagation

Science China Information Sciences, 2017
Peipei Hao, Shuming Chen, Pengcheng Huang 0003, Jianjun Chen, Bin Liang   +4 more
openaire   +1 more source